Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCV28E6327HTSA1

BCV28E6327HTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

16000

BCX5316H6433XTMA1

BCX5316H6433XTMA1

IR (Infineon Technologies)

TRANSISTOR AF SOT89-4

0

BC850CWH6327XTSA1

BC850CWH6327XTSA1

IR (Infineon Technologies)

TRANS NPN 45V 0.1A SOT323

0

BCX5610H6327XTSA1

BCX5610H6327XTSA1

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

20000

BCR158

BCR158

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

0

BCV28H6327XTSA1

BCV28H6327XTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

342000

BC850BE6327

BC850BE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

35665

BCX70HE6327HTSA1

BCX70HE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 45V 0.1A SOT-23

0

BC858AE6327

BC858AE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

33000

BCR10PNH6730

BCR10PNH6730

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

40000

BCX42E6327

BCX42E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

119980

SMBTA92E6433

SMBTA92E6433

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BCP55H6327XTSA1

BCP55H6327XTSA1

IR (Infineon Technologies)

TRANS NPN 60V 1A SOT223-4

8000

BCX5116H6327XTSA1

BCX5116H6327XTSA1

IR (Infineon Technologies)

POWER BIPOLAR TRANSISTOR, 1A I(C

123410

SGW30N60

SGW30N60

IR (Infineon Technologies)

IGBT, 41A I(C), 600V V(BR)CES, N

799

BCX6916E6327

BCX6916E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

6000

BCP5316H6433XTMA1

BCP5316H6433XTMA1

IR (Infineon Technologies)

TRANS PNP 80V 1A SOT223

0

MMBTA56LT1HTSA1

MMBTA56LT1HTSA1

IR (Infineon Technologies)

TRANS PNP 80V 500MA SOT23-3

0

BCX53E6327

BCX53E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

264333

BCX56-16E6433

BCX56-16E6433

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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