Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BDP956

BDP956

IR (Infineon Technologies)

GENERAL PURPOSE TRANSISTOR

17071

BCX70JE6327HTSA1

BCX70JE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 45V 100MA SOT23-3

17053

BC817K-25WE6327

BC817K-25WE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

42000

BDP950H6327XTSA1

BDP950H6327XTSA1

IR (Infineon Technologies)

TRANS PNP 60V 3A SOT223

0

BC860BWH6327XTSA1

BC860BWH6327XTSA1

IR (Infineon Technologies)

TRANS PNP 45V 100MA SOT323-3

63000

BC817SUE6327HTSA1

BC817SUE6327HTSA1

IR (Infineon Technologies)

BIPOLAR TRANSISTOR TRANSISTOR

3000

BC847CWH6778XTSA1

BC847CWH6778XTSA1

IR (Infineon Technologies)

BIPOLAR GENERAL PURPOSE TRANSIST

6000

BCP54H6327XTSA1

BCP54H6327XTSA1

IR (Infineon Technologies)

TRANS NPN 45V 1A SOT223-4

184000

BCX5416E6327

BCX5416E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BCW61DE6327

BCW61DE6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

64915

BC857BE6327HTSA1

BC857BE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 45V 100MA SOT23-3

17591

BCP5216H6327XTSA1

BCP5216H6327XTSA1

IR (Infineon Technologies)

TRANS PNP 60V 1A SOT223

0

BC857CE6433HTMA1

BC857CE6433HTMA1

IR (Infineon Technologies)

TRANS PNP 45V 100MA SOT23-3

60000

BC807-25E6327

BC807-25E6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

1668108

BCP5610H6327XTSA1

BCP5610H6327XTSA1

IR (Infineon Technologies)

BCP56 - GENERAL PURPOSE TRANSIST

19000

BCX55E6327

BCX55E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

30000

BC847CWH6433XTMA1

BC847CWH6433XTMA1

IR (Infineon Technologies)

TRANS NPN 45V 0.1A SOT323

0

BCP49H6419XTMA1

BCP49H6419XTMA1

IR (Infineon Technologies)

TRANS NPN DARL 60V 0.5A SOT223

0

BCX5616H6327XTSA1

BCX5616H6327XTSA1

IR (Infineon Technologies)

TRANSISTOR AF SOT89-4

0

BC857BWE6327

BC857BWE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

333000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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