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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2N4123 PBFREE

2N4123 PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR-SMALL SI

0
CJD44H11 TR13

CJD44H11 TR13

Central Semiconductor

TRANS NPN 80V 8A DPAK

1368
TIP42C SL PBFREE

TIP42C SL PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR BIPOLAR

0
2N3467 PBFREE

2N3467 PBFREE

Central Semiconductor

TRANS PNP 40V 1A TO-39

0
2N3704 PBFREE

2N3704 PBFREE

Central Semiconductor

TRANS NPN 30V TO-92

5328
CMPT2907AE TR PBFREE

CMPT2907AE TR PBFREE

Central Semiconductor

TRANS PNP 60V 0.6A SOT-23

0
2N1613 PBFREE

2N1613 PBFREE

Central Semiconductor

TRANS NPN 50V 0.5A TO-39

540
CMPT8599 TR PBFREE

CMPT8599 TR PBFREE

Central Semiconductor

TRANS PNP 80V 0.5A SOT23

4129
MPSA56 PBFREE

MPSA56 PBFREE

Central Semiconductor

TRANS PNP 80V 0.5A TO92

6601
2N3715 PBFREE

2N3715 PBFREE

Central Semiconductor

TRANS NPN 60V 10A TO-3

198
CP191V-2N2222A-CT20

CP191V-2N2222A-CT20

Central Semiconductor

TRANS NPN 1=20PCS

0
2N6109 PBFREE

2N6109 PBFREE

Central Semiconductor

TRANS PNP 50V 7A TO-220

524
CJD42C TR13 PBFREE

CJD42C TR13 PBFREE

Central Semiconductor

TRANS PNP 100V 6A DPAK

2500
2N5088 PBFREE

2N5088 PBFREE

Central Semiconductor

TRANS NPN 30V 0.05A TO-92

4384
MPSA42 TIN/LEAD

MPSA42 TIN/LEAD

Central Semiconductor

TRANS NPN 300V 0.5A TO-92

10000
CP527-2N6299-CT5

CP527-2N6299-CT5

Central Semiconductor

TRANS PNP 1=5PCS

23
CMPTA46 TR PBFREE

CMPTA46 TR PBFREE

Central Semiconductor

TRANS NPN 450V 0.5A SOT-23

53183
CJD31C TR13 PBFREE

CJD31C TR13 PBFREE

Central Semiconductor

TRANS NPN 100V 3A DPAK

515
CXTA42 TR PBFREE

CXTA42 TR PBFREE

Central Semiconductor

TRANS NPN 300V 0.5A SOT89

3
2N3964 PBFREE

2N3964 PBFREE

Central Semiconductor

TRANS PNP 45V 0.2A TO-18

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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