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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2N3117 PBFREE

2N3117 PBFREE

Central Semiconductor

TRANS NPN 60V 0.05A TO-18

308
2N6388 PBFREE

2N6388 PBFREE

Central Semiconductor

TRANS NPN DARL 80V 10A TO220

0
2N1711 PBFREE

2N1711 PBFREE

Central Semiconductor

TRANS NPN 50V 0.5A TO-39

1297
2N6384 PBFREE

2N6384 PBFREE

Central Semiconductor

TRANS NPN DARL 60V 10A TO-3

150
CMUT2222A BK PBFREE

CMUT2222A BK PBFREE

Central Semiconductor

TRANS NPN 40V 0.6A SOT523

0
CXTA27 TR PBFREE

CXTA27 TR PBFREE

Central Semiconductor

TRANS NPN DARL 60V 0.5A SOT89

995
2N2484 PBFREE

2N2484 PBFREE

Central Semiconductor

TRANS NPN 60V 0.05A TO-18

13315
TIP42B PBFREE

TIP42B PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR BIPOLAR

0
CMPT5401 BK PBFREE

CMPT5401 BK PBFREE

Central Semiconductor

TRANS PNP 150V 0.6A SOT-23

45500
2N3707 PBFREE

2N3707 PBFREE

Central Semiconductor

TRANS NPN 30V TO-92

1707
2N3421 PBFREE

2N3421 PBFREE

Central Semiconductor

TRANS NPN 80V TO39

0
TIP29C PBFREE

TIP29C PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR BIPOLAR

0
CET3906E TR PBFREE

CET3906E TR PBFREE

Central Semiconductor

TRANS PNP 60V 0.2A SOT883

2147483647
2N3584 PBFREE

2N3584 PBFREE

Central Semiconductor

TRANS NPN 250V 2A TO-66

127
2N4124 PBFREE

2N4124 PBFREE

Central Semiconductor

TRANS NPN 25V TO-92

6746
TIP41A PBFREE

TIP41A PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR BIPOLAR

0
CXTA92 TR PBFREE

CXTA92 TR PBFREE

Central Semiconductor

TRANS PNP 300V 0.5A SOT89

16397
TIP112 TIN/LEAD

TIP112 TIN/LEAD

Central Semiconductor

TRANS NPN 100V TO220

0
CJD112 TR13

CJD112 TR13

Central Semiconductor

TRANS NPN 100V 2A DPAK

1420
CBCX68 TR PBFREE

CBCX68 TR PBFREE

Central Semiconductor

TRANS NPN 25V SOT89

5505

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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