ample-chip ample-chip
RFQ
BOM

Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2N4237 PBFREE

2N4237 PBFREE

Central Semiconductor

TRANS NPN 40V 3A TO-39

0
2N4398 PBFREE

2N4398 PBFREE

Central Semiconductor

TRANS PNP 40V 30A TO-3

75
2N5303 PBFREE

2N5303 PBFREE

Central Semiconductor

TRANS NPN 80V 20A TO-3

588
CZT2222A TR PBFREE

CZT2222A TR PBFREE

Central Semiconductor

TRANS NPN 40V 0.6A SOT223

14061
2N6427 PBFREE

2N6427 PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR-SMALL SI

0
CEN-U45 PBFREE

CEN-U45 PBFREE

Central Semiconductor

TRANS NPN DARL 40V 2A TO-202

366
2N5209 PBFREE

2N5209 PBFREE

Central Semiconductor

TRANS NPN 50V 0.05A TO-92

0
2N6545 PBFREE

2N6545 PBFREE

Central Semiconductor

TRANS NPN 400V 8A TO-3

336
2N3442 PBFREE

2N3442 PBFREE

Central Semiconductor

TRANS NPN 140V 10A TO-3

167
TIP42C PBFREE

TIP42C PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR BIPOLAR

0
TIP42A PBFREE

TIP42A PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR BIPOLAR

0
2N3773 PBFREE

2N3773 PBFREE

Central Semiconductor

TRANS NPN 140V 16A TO-3

3
BC212A PBFREE

BC212A PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR-SMALL SI

0
2N2219A PBFREE

2N2219A PBFREE

Central Semiconductor

TRANS NPN 40V 0.8A TO-39

3161
MPSA64 PBFREE

MPSA64 PBFREE

Central Semiconductor

TRANS PNP DARL 30V 0.5A TO-92

4584
2N2405 PBFREE

2N2405 PBFREE

Central Semiconductor

TRANS NPN 90V 1A TO-39

803
2N5551 TIN/LEAD

2N5551 TIN/LEAD

Central Semiconductor

TRANS NPN 160V 0.6A TO-92

881
PN4250A PBFREE

PN4250A PBFREE

Central Semiconductor

TRANS PNP 60V 0.5A TO-92

6539
MPSA18 PBFREE

MPSA18 PBFREE

Central Semiconductor

TRANS NPN 45V 0.2A TO-92

4942
TIP29B PBFREE

TIP29B PBFREE

Central Semiconductor

THROUGH-HOLE TRANSISTOR BIPOLAR

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top