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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
CMST3906 TR PBFREE

CMST3906 TR PBFREE

Central Semiconductor

TRANS PNP 40V 0.2A SOT323

10865
2N2369A PBFREE

2N2369A PBFREE

Central Semiconductor

TRANS NPN 15V 0.2A TO-18

0
2N1310

2N1310

Central Semiconductor

TRANS NPN 90V 0.2A TO5

0
CENW92

CENW92

Central Semiconductor

TRANS PNP 300V 0.5A TO237

0
2N3702 PBFREE

2N3702 PBFREE

Central Semiconductor

TRANS PNP 25V TO-92

5080
CMPTA92 TR

CMPTA92 TR

Central Semiconductor

TRANS PNP 300V 0.5A SOT-23

15651
2N5301 PBFREE

2N5301 PBFREE

Central Semiconductor

TRANS NPN 40V 30A TO-3

0
PN2906A PBFREE

PN2906A PBFREE

Central Semiconductor

TRANS PNP 60V 0.6A TO-92

0
2N5210 PBFREE

2N5210 PBFREE

Central Semiconductor

TRANS NPN 50V 0.05A TO-92

0
CET3904E TR PBFREE

CET3904E TR PBFREE

Central Semiconductor

TRANS NPN 60V 0.2A SOT883

2147483647
CMPT3646 TR PBFREE

CMPT3646 TR PBFREE

Central Semiconductor

TRANS NPN 40V 0.2A SOT23

6887
2N5308 PBFREE

2N5308 PBFREE

Central Semiconductor

TRANS NPN DARL 40V 0.3A TO-92

2214
CMPTA42 TR

CMPTA42 TR

Central Semiconductor

TRANS NPN 300V 0.5A SOT-23

19
CMPTA44 TR PBFREE

CMPTA44 TR PBFREE

Central Semiconductor

TRANS NPN 400V 0.3A SOT-23

2434
2N3792 PBFREE

2N3792 PBFREE

Central Semiconductor

TRANS PNP 80V 10A TO-3

272
2N4923 PBFREE

2N4923 PBFREE

Central Semiconductor

TRANS NPN 80V 1A TO-126

286
CMNT3904E TR PBFREE

CMNT3904E TR PBFREE

Central Semiconductor

TRANS NPN 60V 0.2A SOT953

224000
CMPT4401 TR PBFREE

CMPT4401 TR PBFREE

Central Semiconductor

TRANS NPN 40V 0.6A SOT-23

655
MPSA63 PBFREE

MPSA63 PBFREE

Central Semiconductor

TRANS PNP DARL 20V 0.5A TO-92

13004
2N4014 PBFREE

2N4014 PBFREE

Central Semiconductor

TRANS NPN 50V TO-18

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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