Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
LB1214-E

LB1214-E

Sanyo Denki SanUPS Products

GENERRAL-PURPOSE TRANSISTOR ARRA

850

2SA1824S-AY

2SA1824S-AY

Sanyo Denki SanUPS Products

PNP EPITAXIAL PLANAR SILICON

1000

2SB926T

2SB926T

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PNP EPITAXIAL PLANAR SILICON

510

2SC4521T-TD-E-SY

2SC4521T-TD-E-SY

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

89000

2SC4572-RA7

2SC4572-RA7

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NPN TRIPLE DIFFUSED PLANAR SIL

3749

2SC3922

2SC3922

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

1502

2SA1688-5-TL-E

2SA1688-5-TL-E

Sanyo Denki SanUPS Products

PNP EPITAXIAL PLANAR SILICON

30000

2SA1208S

2SA1208S

Sanyo Denki SanUPS Products

PNP EPITAXIAL PLANAR SILICON

0

2SC3953E

2SC3953E

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

1077

2SD1247S-AE

2SD1247S-AE

Sanyo Denki SanUPS Products

NPN SILICON TRANSISTOR

49000

2SB1229T

2SB1229T

Sanyo Denki SanUPS Products

PNP EPITAXIAL PLANAR SILICON

510

2SC4224M-E-SY

2SC4224M-E-SY

Sanyo Denki SanUPS Products

NPN TRIPLE DIFFUSED PLANAR SIL

6510

2SD1153

2SD1153

Sanyo Denki SanUPS Products

NPN DARLINGTON TRANSISTOR

6450

2SC3142-3-TB-E-SY

2SC3142-3-TB-E-SY

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

30000

2SA1773E-TL-E

2SA1773E-TL-E

Sanyo Denki SanUPS Products

HIGH VOLTAGE DRIVER APPLICATIONS

579

2SD1907R-MD16-E

2SD1907R-MD16-E

Sanyo Denki SanUPS Products

PNP EPITAXIAL PLANAR SILICON

4500

2SC4452-3-TL-E

2SC4452-3-TL-E

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

59924

2SC6016-TD-E

2SC6016-TD-E

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

990

2SD1725

2SD1725

Sanyo Denki SanUPS Products

NPN SILICON TRANSISTOR

0

2SC4488T

2SC4488T

Sanyo Denki SanUPS Products

PNP SILICON TRANSISTOR

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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