Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SC3143-4-TB-E-SY

2SC3143-4-TB-E-SY

Sanyo Denki SanUPS Products

TRANSISTOR

2687

2SA1699E-AA

2SA1699E-AA

Sanyo Denki SanUPS Products

PNP SILICON TRANSISTOR

0

2SA1520-TB-E

2SA1520-TB-E

Sanyo Denki SanUPS Products

PNP SILICON TRANSISTOR

63000

2SD1935-6-TB-E

2SD1935-6-TB-E

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

0

2SB1120F-TD-E

2SB1120F-TD-E

Sanyo Denki SanUPS Products

PNP EPITAXIAL PLANAR SILICON

0

2SC3776D

2SC3776D

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

33995

2SC2271E-AE

2SC2271E-AE

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

12000

2SC2909S-AA

2SC2909S-AA

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NPN SILICON TRANSISTOR

16500

2SC3361-6-TB-E

2SC3361-6-TB-E

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

111000

2SC3591

2SC3591

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NPN SILICON TRANSISTOR

8000

2SA1319S-AA

2SA1319S-AA

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SMALL SIGNAL BIPOLAR TRANSISTOR

10500

2SC3650-TD-E

2SC3650-TD-E

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

2000

FW213-TL-E

FW213-TL-E

Sanyo Denki SanUPS Products

PNP/NPN EPITAXIAL PLANAR SILICON

8000

2SB764E-SSH-AE

2SB764E-SSH-AE

Sanyo Denki SanUPS Products

PNP EPITAXIAL PLANAR SILICON

13000

2SB985T-AE

2SB985T-AE

Sanyo Denki SanUPS Products

PNP EPITAXIAL PLANAR SILICON

42000

2SA1207S-AA

2SA1207S-AA

Sanyo Denki SanUPS Products

SMALL SIGNAL BIPOLAR TRANSISTOR

84000

FC12F-TL

FC12F-TL

Sanyo Denki SanUPS Products

N CHANNEL JUNCTION SILICON TRANS

6000

2SC2999E-SPA

2SC2999E-SPA

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

0

2SA1855S-AY

2SA1855S-AY

Sanyo Denki SanUPS Products

PNP SILICON TRANSISTOR

1000

2SC4523S-E

2SC4523S-E

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

4116

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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