Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SC3114S

2SC3114S

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

34320

2SC3775-3-TB-E

2SC3775-3-TB-E

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

15000

CPH5701-TL-E

CPH5701-TL-E

Sanyo Denki SanUPS Products

TRANSISTOR FOR STEP-DOWN DC-DC C

6000

2SB927T-AE

2SB927T-AE

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PNP SILICON TRANSISTOR

8000

2SC2812-7-TB-E

2SC2812-7-TB-E

Sanyo Denki SanUPS Products

NPN SILICON TRANSISTOR

402000

2SC3752M

2SC3752M

Sanyo Denki SanUPS Products

NPN TRIPLE DIFFUSED PLANAR SILIC

0

2SC3775-4-TB-E

2SC3775-4-TB-E

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

15000

2SC4671-AN

2SC4671-AN

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

17500

2SB764E-SSH

2SB764E-SSH

Sanyo Denki SanUPS Products

PNP EPITAXIAL PLANAR SILICON

37750

2SC3689-TB-E-SY

2SC3689-TB-E-SY

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

962

2SC4455Q-AA

2SC4455Q-AA

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

18500

2SA2201-TD-E

2SA2201-TD-E

Sanyo Denki SanUPS Products

PNP SILICON TRANSISTOR

0

2SC2812-6-TB-E

2SC2812-6-TB-E

Sanyo Denki SanUPS Products

NPN SILICON TRANSISTOR

291000

2SK443-6-TB-E

2SK443-6-TB-E

Sanyo Denki SanUPS Products

PNP/NPN EPITAXIAL PLANAR SILICON

5520

2SD1246S-AA

2SD1246S-AA

Sanyo Denki SanUPS Products

NPN SILICON TRANSISTOR

45682

2SC3599E

2SC3599E

Sanyo Denki SanUPS Products

NPN EPITAXIAL PLANAR SILICON

5333

2SA1973-5-TB-E

2SA1973-5-TB-E

Sanyo Denki SanUPS Products

PNP EPITAXIAL PLANAR SILICON

18000

2SB808G-SPA-AC

2SB808G-SPA-AC

Sanyo Denki SanUPS Products

SILICON EPITAXIAL PLANAR

20000

2SA1786E-AN

2SA1786E-AN

Sanyo Denki SanUPS Products

PNP SILICON TRANSISTOR

2219

2SB1450S-DL-E

2SB1450S-DL-E

Sanyo Denki SanUPS Products

PNP SILICON TRANSISTOR

4000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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