Transistors - Bipolar (BJT)

Transistors - Bipolar (BJT) - Single

Part Number	Description / PDF	Quantity
KSB546YTU Sanyo Semiconductor/ON Semiconductor	TRANS PNP 150V 2A TO220-3	100013000
BC817K-25HVL Nexperia	BC817K-25H SOT23 TO-236AB	2628
BC859BW,115 Nexperia	TRANS PNP 30V 0.1A SOT323	0
2SAR544PFRAT100 ROHM Semiconductor	PNP DRIVER TRANSISTOR (CORRESPON	999
2SC2001-A Renesas Electronics America	SMALL SIGNAL BIPOLAR TRANSTR NPN	7572878
2SC2909S	SMALL SIGNAL BIPOLAR TRANSTR NPN	8500
2N5301 PBFREE Central Semiconductor	TRANS NPN 40V 30A TO-3	0
DSA5001S0L Panasonic	TRANS PNP 50V 0.1A SMINI3	15
KSC1623OMTF	TRANS NPN 50V 100MA SOT23-3	0
NTE251 NTE Electronics, Inc.	TRANS NPN 100V 20A TO3	371
TIP34A NTE Electronics, Inc.	TRANS PNP 60V 10A TO218	775
BC807-16QCZ Nexperia	BC807-16QC/SOT8009/DFN1412D-3	5000
MPS651	SMALL SIGNAL BIPOLAR TRANSISTOR	14193
2SC4382 Sanken Electric Co., Ltd.	TRANS NPN 200V 2A TO220F	1554
NTE187 NTE Electronics, Inc.	TRANS PNP 60V 3A TO202	69
2N2218A Roving Networks / Microchip Technology	NPN TRANSISTOR	0
NSVMMBT5401LT3G Sanyo Semiconductor/ON Semiconductor	TRANS PNP 150V 500MA SOT23-3	4026
PN2906A PBFREE Central Semiconductor	TRANS PNP 60V 0.6A TO-92	0
MMBT3904LT1HTSA1 IR (Infineon Technologies)	TRANS NPN 40V 200MA SOT23-3	44603
MS2N4931 Microsemi	TRANS PNP TO-39	3

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

Type	Functional Characteristics	Application Examples
NPN Transistor	Majority carriers: electrons. Requires positive base current for conduction.	Low-noise amplifiers, digital logic circuits
PNP Transistor	Majority carriers: holes. Conducts with negative base current.	Power supply circuits, motor controllers
High-Frequency BJT	Optimized for RF/microwave signal amplification (f_T > 100 MHz)	Wireless communication systems, radar
Power BJT	High current/voltage ratings (I_C > 1A, V_CE > 50V)	Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

Emitter: Heavily doped region emitting charge carriers
Base: Thin, lightly doped middle region controlling carrier flow
Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

Parameter	Description	Importance
Current Gain (h_FE)	Ratio of collector to base current (10-1000)	Determines amplification capability
Transition Frequency (f_T)	Frequency at which current gain drops to 1	Limits high-frequency performance
Max Collector Current (I_Cmax)	Maximum allowable continuous collector current	Defines power handling capability
Breakdown Voltage (V_CEO)	Max voltage between collector and emitter	Prevents device failure under stress
Saturation Voltage (V_CEsat)	Voltage drop in fully conducting state	Affects power efficiency in switching

5. Application Areas

Consumer Electronics: Audio amplifiers, LED drivers
Automotive: Engine control units, electric vehicle inverters
Industrial: PLCs, motor controllers
Telecommunications: RF power amplifiers, fiber optic transceivers
Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

Manufacturer	Product Series	Key Specifications	Typical Use
ON Semiconductor	2N3904	hFE: 100-300, fT: 300 MHz	General-purpose switching
Infineon	BC547	VCEO: 50V, ICmax: 100mA	Analog signal amplification
STMicroelectronics	2SD2656	ICmax: 15A, VCEO: 80V	Power inverter applications
Diodes Inc.	BFR93A	fT: 10 GHz, Noise Figure: 2dB	High-frequency front-end amplifiers

7. Selection Guidelines

Determine operating frequency: Select fT > 3 target frequency
Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
Thermal considerations: Calculate power dissipation (P=V_CE I_C)
Package type: TO-92 for low power, TO-220 for high-power applications
Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

High-frequency BJTs operating beyond 100 GHz for 6G communication
Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
Wide-bandgap materials (SiC/GaN) for higher power density
Miniaturization through chip-scale packaging
Improved thermal management solutions for automotive applications