Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC850C,235

BC850C,235

Nexperia

TRANS NPN 45V 100MA TO236AB

2648

BCP53-16T3G

BCP53-16T3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 1.5A SOT-223

20850

ZTX605STZ

ZTX605STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 120V 1A E-LINE

0

NSS40200LT1G

NSS40200LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 2A SOT23-3

1405

BC817-25/DG/B4215

BC817-25/DG/B4215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

12000

KSP2222ABU

KSP2222ABU

SMALL SIGNAL BIPOLAR TRANSISTOR,

684424

KSC2334YTU

KSC2334YTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 7A TO-220

3824

2SD14500SA

2SD14500SA

Panasonic

TRANS NPN 20V 0.5A NS-B1

3905

ZXTN26070CV-7

ZXTN26070CV-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 70V 2A SOT666

24000

2SA2097(TE16L1,NQ)

2SA2097(TE16L1,NQ)

Toshiba Electronic Devices and Storage Corporation

TRANS PNP 50V 5A SC-62

0

2N4920

2N4920

Solid State Inc.

TRANS PNP 80V 1A TO225AA

0

MJE5731AG

MJE5731AG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 375V 1A TO220AB

800600

TN6729A

TN6729A

TRANS PNP 80V 1A TO226-3

7315

BCP56-16H,115

BCP56-16H,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

2SC4081RT1G

2SC4081RT1G

TRANS NPN 50V 100MA SC70-3

61500

NSV1C301ET4G

NSV1C301ET4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 3A 3DPAK

0

2SB1316TL

2SB1316TL

ROHM Semiconductor

TRANS PNP DARL 100V 2A SOT-428

1743

2SC3478-A

2SC3478-A

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSTR NPN

4790

MPS750G

MPS750G

TRANS PNP 40V 2A TO92-3

0

KSD362R

KSD362R

TRANS NPN 70V 5A TO220-3

1170

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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