Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2N6519TA

2N6519TA

TRANS PNP 300V 500MA TO92-3

5505

2SA1419S-TD-E

2SA1419S-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 160V 1.5A SOT89-3

1850

MJB44H11G

MJB44H11G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 10A D2PAK

126

PZT2907A,115

PZT2907A,115

Nexperia

TRANS PNP 60V 0.6A SOT223

1554

2N3439

2N3439

NTE Electronics, Inc.

TRANS NPN 350V 1A TO39

0

BFU550A235

BFU550A235

NXP Semiconductors

NPN WIDEBAND SILICON RF TRANSIST

10000

BC817-25QBZ

BC817-25QBZ

Nexperia

BC817-25QB/SOT8015/DFN1110D-3

4980

FJL4315OTU

FJL4315OTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 250V 17A TO264-3

5161500

DN0150BLP4-7B

DN0150BLP4-7B

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 0.1A DFN1006H4-3

48

BC55-10PA,115

BC55-10PA,115

Nexperia

TRANS NPN 60V 1A 3HUSON

1579

BC848AE6327

BC848AE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

78000

KSC1008RBU

KSC1008RBU

TRANS NPN 60V 700MA TO92-3

9000

2N5401YTA

2N5401YTA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 150V 600MA TO92-3

0

2SB1151-AZ

2SB1151-AZ

Renesas Electronics America

POWER BIPOLAR TRANSISTOR, PNP

7546

2SD1816T-H

2SD1816T-H

TRANS NPN 100V 4A TP

26000

2N3763

2N3763

Roving Networks / Microchip Technology

PNP TRANSISTOR

0

BC848AMTF

BC848AMTF

TRANS NPN 30V 100MA SOT23-3

12000

MMBT3904TT1G

MMBT3904TT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 200MA SC75 SOT416

0

2SB1508R

2SB1508R

Sanyo Denki SanUPS Products

PNP SILICON TRANSISTOR

2629

MJF127

MJF127

TRANS PNP 100V 5A TO220FP

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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