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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
MAPR-002729-170M00

MAPR-002729-170M00

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V

0
MRF10005

MRF10005

Metelics (MACOM Technology Solutions)

TRANS 5W 960MHZ-1215MHZ

0
PH1090-75L

PH1090-75L

Metelics (MACOM Technology Solutions)

RF TRANS NPN 70V

2
PH3135-5S

PH3135-5S

Metelics (MACOM Technology Solutions)

RF TRANS NPN 60V

0
MRF1000MB

MRF1000MB

Metelics (MACOM Technology Solutions)

RF TRANS NPN 20V 332A-03

0
MAPRST0912-50

MAPRST0912-50

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V

0
MRF448

MRF448

Metelics (MACOM Technology Solutions)

RF TRANS NPN 50V 211-11

0
MRF317

MRF317

Metelics (MACOM Technology Solutions)

TRANS RF NPN 35V 12A 316-01

0
MRF426

MRF426

Metelics (MACOM Technology Solutions)

TRANS RF NPN 35V 3A 211-07

0
MRF429

MRF429

Metelics (MACOM Technology Solutions)

TRANS RF NPN 50V 16A 211-11

0
MRF10031

MRF10031

Metelics (MACOM Technology Solutions)

RF TRANS NPN 55V 332A-03

16
MRF10120

MRF10120

Metelics (MACOM Technology Solutions)

RF TRANS NPN 55V 355C-02

6
PH3134-30S

PH3134-30S

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V

0
MRF454

MRF454

Metelics (MACOM Technology Solutions)

RF TRANS NPN 25V 211-11

0
MRF16006

MRF16006

Metelics (MACOM Technology Solutions)

TRANS RF NPN 28V 6W 395C-01

0
PH2729-130M

PH2729-130M

Metelics (MACOM Technology Solutions)

RF TRANS NPN 63V

320
PH2729-25M

PH2729-25M

Metelics (MACOM Technology Solutions)

RF TRANS NPN 60V

3
MRF10502

MRF10502

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V 355J-02

140
PH3135-65M

PH3135-65M

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V

20
MRF1090MB

MRF1090MB

Metelics (MACOM Technology Solutions)

RF TRANS NPN 70V 332A-03

0

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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