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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
MRF313

MRF313

Metelics (MACOM Technology Solutions)

TRANS RF NPN 30V 150MA 305A-01

0
PH3135-20M

PH3135-20M

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V

0
MRF392

MRF392

Metelics (MACOM Technology Solutions)

RF TRANS 2NPN EMITTR 30V 744A-01

0
MAPR-002731-115M00

MAPR-002731-115M00

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V

0
MRF321

MRF321

Metelics (MACOM Technology Solutions)

RF TRANS NPN 33V 244-04

0
MRF10350

MRF10350

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V 355E-01

1080
PH8890

PH8890

Metelics (MACOM Technology Solutions)

TRANSISTOR

0
MAPL-000817-012CPC

MAPL-000817-012CPC

Metelics (MACOM Technology Solutions)

TRANSISTOR

0
PH3134-75S

PH3134-75S

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V

0
PH3134-11S

PH3134-11S

Metelics (MACOM Technology Solutions)

RF TRANS NPN 60V

0
PH9046

PH9046

Metelics (MACOM Technology Solutions)

TRANSISTOR

0
PH8930

PH8930

Metelics (MACOM Technology Solutions)

TRANSISTOR

0
PH8906

PH8906

Metelics (MACOM Technology Solutions)

TRANSISTOR

13
PH9008

PH9008

Metelics (MACOM Technology Solutions)

TRANSISTOR

133
MAPH-011002-000000

MAPH-011002-000000

Metelics (MACOM Technology Solutions)

TRANSISTOR

7
PH9096

PH9096

Metelics (MACOM Technology Solutions)

TRANSISTOR

0
PH9034

PH9034

Metelics (MACOM Technology Solutions)

TRANSISTOR

0
PH8931

PH8931

Metelics (MACOM Technology Solutions)

TRANSISTOR

0
PH8909

PH8909

Metelics (MACOM Technology Solutions)

TRANSISTOR

0
PH8929

PH8929

Metelics (MACOM Technology Solutions)

TRANSISTOR

0

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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