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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
MAPRST0912-350

MAPRST0912-350

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V 1.215GHZ

0
MRF314

MRF314

Metelics (MACOM Technology Solutions)

RF TRANS NPN 35V 211-07

116
MRF1004MB

MRF1004MB

Metelics (MACOM Technology Solutions)

TRANS NPN 4W 960MHZ-1215MHZ

0
MRF587

MRF587

Metelics (MACOM Technology Solutions)

TRANS RF NPN 17A 200MA 244A-01

0
PH1090-550S

PH1090-550S

Metelics (MACOM Technology Solutions)

RF TRANS NPN 80V

40
PH2731-75L

PH2731-75L

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V

0
MRF393

MRF393

Metelics (MACOM Technology Solutions)

RF TRANS 2NPN EMITTR 30V 744A-01

20
MRF10150

MRF10150

Metelics (MACOM Technology Solutions)

TRANS NPN 150W 1025MHZ-1050MHZ

0
PH1090-350L

PH1090-350L

Metelics (MACOM Technology Solutions)

RF TRANS NPN 80V

0
PH3134-55L

PH3134-55L

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V

20
MRF421

MRF421

Metelics (MACOM Technology Solutions)

TRANS RF NPN 20V 20A 211-11

0
MRF1150MB

MRF1150MB

Metelics (MACOM Technology Solutions)

TRANS NPN 150W 906MHZ-1215MHZ

0
MRF327

MRF327

Metelics (MACOM Technology Solutions)

RF TRANS NPN 33V 316-01

1
MRF316

MRF316

Metelics (MACOM Technology Solutions)

TRANS RF NPN 35V 9A 316-01

0
PH1090-175L

PH1090-175L

Metelics (MACOM Technology Solutions)

RF TRANS NPN 80V

320
MAPR-000912-500S00

MAPR-000912-500S00

Metelics (MACOM Technology Solutions)

RF TRANS NPN 80V

13
MRF428

MRF428

Metelics (MACOM Technology Solutions)

RF TRANS NPN 55V 211-11

44
MRF323

MRF323

Metelics (MACOM Technology Solutions)

TRANS RF NPN 33V 1.1A 244-04

0
MRF455

MRF455

Metelics (MACOM Technology Solutions)

RF TRANS NPN 18V 211-07

40
MRF422

MRF422

Metelics (MACOM Technology Solutions)

RF TRANS NPN 35V 211-11

1

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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