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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
BFS25A,115

BFS25A,115

NXP Semiconductors

BFS25A

122688
BFP7220ESDH6327

BFP7220ESDH6327

IR (Infineon Technologies)

LOW-NOISE SIGE:C TRANSISTOR

1500
2SC48350RL

2SC48350RL

Panasonic

RF TRANS NPN 10V 6GHZ SMINI3-G1

3738
KSC3123RMTF

KSC3123RMTF

RF SMALL SIGNAL TRANSISTOR

0
55GN01FA-TL-H

55GN01FA-TL-H

RF SMALL SIGNAL BIPOLAR TRANSIST

228445
BFP620H7764XTSA1

BFP620H7764XTSA1

IR (Infineon Technologies)

RF TRANS NPN 2.8V 65GHZ SOT343-4

20867
NTE160

NTE160

NTE Electronics, Inc.

RF TRANS PNP 20V 700MHZ TO72

1503
BFP 182 E7764

BFP 182 E7764

IR (Infineon Technologies)

RF TRANS NPN 12V 8GHZ SOT143-4

828
BFU550215

BFU550215

NXP Semiconductors

NPN RF TRANSISTOR

6000
2N918 PBFREE

2N918 PBFREE

Central Semiconductor

RF TRANS NPN 15V 600MHZ TO72

1178
2SC2620QCTL-E

2SC2620QCTL-E

Renesas Electronics America

RF SMALL SIGNAL BIPOLAR TRANSIST

0
BFQ19SH6327XTSA1

BFQ19SH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 15V 5.5GHZ SOT89-3

3750
PH2729-130M

PH2729-130M

Metelics (MACOM Technology Solutions)

RF TRANS NPN 63V

320
BFP540FESDH6327XTSA1

BFP540FESDH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 5V 30GHZ 4TSFP

4435
55GN01CA-TB-E

55GN01CA-TB-E

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 10V 4.5GHZ 3CP

259678000
HFA3096B

HFA3096B

Intersil (Renesas Electronics America)

RF SMALL SIGNAL TRANSISTOR

2416
BFU530XAR

BFU530XAR

NXP Semiconductors

RF TRANS NPN 12V 11GHZ SOT143B

1607
BF776H6327

BF776H6327

IR (Infineon Technologies)

RF TRANSISTOR, NPN

15000
BFR35APE6327

BFR35APE6327

IR (Infineon Technologies)

LOW-NOISE TRANSISTOR

393000
BFP196E6327HTSA1

BFP196E6327HTSA1

IR (Infineon Technologies)

RF TRANS NPN 12V 7.5GHZ SOT143-4

29500

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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