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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
MRF10031

MRF10031

Metelics (MACOM Technology Solutions)

RF TRANS NPN 55V 332A-03

16
MMBT918LT1

MMBT918LT1

TRANS SS VHF NPN 15V SOT23

141000
BFP540

BFP540

IR (Infineon Technologies)

RF SMALL SIGNAL BIPOLAR TRANSIST

31905
MRF10120

MRF10120

Metelics (MACOM Technology Solutions)

RF TRANS NPN 55V 355C-02

6
PRF957,115

PRF957,115

NXP Semiconductors

RF SMALL SIGNAL TRANSISTOR

0
MMBT918LT1G

MMBT918LT1G

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 15V 600MHZ SOT23-3

6553
MSC3930-BT1

MSC3930-BT1

SMALL SIGNAL BIPOLAR TRANSISTOR

3000
BFP520FH6327XTSA1

BFP520FH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 3.5V 45GHZ 4TSFP

2926
PH3134-30S

PH3134-30S

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V

0
2SC5245A-4-TL-E

2SC5245A-4-TL-E

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 10V 8GHZ 3MCP

236530000
2SC4098T106P

2SC4098T106P

ROHM Semiconductor

RF TRANS NPN 25V 300MHZ UMT3

0
BFG67/X,215

BFG67/X,215

NXP Semiconductors

TRANS RF NPN 10V 8GHZ SOT143R

5034
2SC5008-T1-A

2SC5008-T1-A

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSISTOR

273000
NSVF2250WT1G

NSVF2250WT1G

TRANSISTOR NPN BIPO UHF SOT-323

108000
BF776H6327XTSA1

BF776H6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 4.7V 46GHZ SOT343-4

4192
2SC5231A-9-TL-E

2SC5231A-9-TL-E

SMALL SIGNAL BIPOLAR TRANSISTOR

387417
BFU550VL

BFU550VL

NXP Semiconductors

RF TRANS NPN 12V 11GHZ SOT143B

0
MMBTH10-TP

MMBTH10-TP

Micro Commercial Components (MCC)

RF TRANS NPN 25V 650MHZ SOT23

0
BFP740FESDH6327XTSA1

BFP740FESDH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 4.7V 47GHZ 4TSFP

3445
MRF454

MRF454

Metelics (MACOM Technology Solutions)

RF TRANS NPN 25V 211-11

0

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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