Thyristors - TRIACs

Image Part Number Description / PDF Quantity Rfq
BT138-600D,127

BT138-600D,127

NXP Semiconductors

NOW WEEN - BT138-600D - 4 QUADRA

6955

ACTT4X-800C,127

ACTT4X-800C,127

NXP Semiconductors

NOW WEEN - ACTT4X-800C - AC THYR

2000

BT139X-600F,127

BT139X-600F,127

NXP Semiconductors

NOW WEEN - BT139X-600F - 4 QUADR

0

BTA204-600C,127

BTA204-600C,127

NXP Semiconductors

NOW WEEN - BTA204-600C - 3 QUADR

5050

BT234-600D,127

BT234-600D,127

NXP Semiconductors

NOW WEEN - BT234-600D - 4 QUADRA

2000

BT131-600/DG,116

BT131-600/DG,116

NXP Semiconductors

NOW WEEN - BT131-600 - 4 QU+E379

10788

BT136-600/DG,127

BT136-600/DG,127

NXP Semiconductors

NOW WEEN - BT136-600 - 4 QUADRAN

0

OT407412

OT407412

NXP Semiconductors

4 QUADRANT TRIAC TO 92

141274

BTA2008W-600D

BTA2008W-600D

NXP Semiconductors

NOW WEEN - BTA2008W-600D - 3 QUA

0

BT131-600D116

BT131-600D116

NXP Semiconductors

4 QUADRANT TRIAC TO 92

4000

BT138X-600G,127

BT138X-600G,127

NXP Semiconductors

NOW WEEN - BT138X-600G - 4 QUADR

0

OT412115

OT412115

NXP Semiconductors

NOW WEEN - OT412 - TBC - SC-73

1000

BTA330Y-800BT127

BTA330Y-800BT127

NXP Semiconductors

3 QUADRANT TRIAC TO 220AB

14000

BTA212-800B,127

BTA212-800B,127

NXP Semiconductors

NOW WEEN - BTA212-800B - 3 QUADR

2797

BT234-800D,127

BT234-800D,127

NXP Semiconductors

NOW WEEN - BT234-800D - 4 QUADRA

0

BTA310-600C,127

BTA310-600C,127

NXP Semiconductors

NOW WEEN - BTA310-600C - 3 QUADR

4000

ACTT6-800E,127

ACTT6-800E,127

NXP Semiconductors

NOW WEEN - ACTT6-800E - AC THYRI

2100

BT137X-600F/L02127

BT137X-600F/L02127

NXP Semiconductors

4 QUADRANT TRIAC TO 220F

0

BTA312X-800C/L01127

BTA312X-800C/L01127

NXP Semiconductors

3 QUADRANT TRIAC TO 220F

1200

BT138Y-800E,127

BT138Y-800E,127

NXP Semiconductors

NOW WEEN - BT138Y-800E - 4 QUADR

0

Thyristors - TRIACs

1. Overview

TRIAC (Triode for Alternating Current) is a three-terminal semiconductor device belonging to the thyristor family. It enables bidirectional current flow control in AC circuits through a single gate terminal. As a key component in power electronics, TRIACs are widely used for phase control, switching, and regulation of AC loads. Their ability to conduct current in both directions makes them ideal for applications requiring full-wave control, such as dimmers and motor speed regulators.

2. Main Types and Functional Classification

Type Functional Characteristics Application Examples
Standard TRIAC General-purpose with moderate gate sensitivity Light dimmers, heater controls
Sensitive Gate TRIAC Low gate trigger current ( 5mA) Microcontroller-driven circuits
Logic Level TRIAC Compatible with 3.3V/5V logic signals Smart home automation systems
High dv/dt TRIAC Enhanced immunity to voltage spikes Industrial motor drives

3. Structure and Composition

TRIACs feature a four-layer (PNPN) silicon structure with three electrodes: Main Terminal 1 (MT1), Main Terminal 2 (MT2), and Gate (G). The symmetrical design allows bidirectional conduction. Modern TRIACs incorporate:

  • Dielectric passivation layers for voltage stability
  • Aluminum gate metallization
  • Epitaxial silicon wafers with precise doping profiles
  • Plastic encapsulation (TO-220/TO-92 packages)

4. Key Technical Parameters

Parameter Description Typical Range
Breakover Voltage (VBO) Minimum voltage to initiate conduction 200-1200V
Gate Trigger Current (IGT) Required gate current for turn-on 5-50mA
Holding Current (IH) Minimum current to maintain conduction 5-50mA
RMS On-State Current (IT(RMS)) Continuous load current capacity 0.5-50A
dv/dt Rating Voltage change immunity 10-50V/ s

5. Application Fields

  • Consumer Electronics: Smart lighting systems, washing machine water level controls
  • Industrial Automation: AC motor speed controllers, solid-state relays
  • Power Systems: Voltage regulators, reactive power compensators
  • Automotive: Electric vehicle charging circuits, HVAC controls
  • Renewable Energy: Solar inverter AC switching circuits

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Parameters
STMicroelectronics BT136-600E 600V, 4A, 10mA IGT
ON Semiconductor Q6015LH 600V, 15A, 15mA IGT
Infineon Technologies BTA16-600B 600V, 16A, 50mA IGT
Microsemi MAC97A8 600V, 8A, 5mA IGT

7. Selection Guidelines

  1. Verify VBO exceeds maximum circuit voltage by 20%
  2. IT(RMS) should be 1.5 load current
  3. Match IGT with driver circuit capability
  4. Consider heatsinking requirements
  5. Select dv/dt rating based on load inductance
  6. Use zero-crossing detection for EMI-sensitive applications

8. Industry Trends

Key development trends include:

  • Integration with SiC/GaN for higher efficiency
  • Smart packaging with built-in temperature sensors
  • Miniaturization for space-constrained applications
  • Improved immunity to electromagnetic interference
  • AI-driven predictive maintenance in industrial systems

Market growth is driven by smart grid implementations and EV charging infrastructure expansion, with a projected CAGR of 6.8% through 2030.

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