Thyristors - TRIACs

Image Part Number Description / PDF Quantity Rfq
BTA204S-1000C,118

BTA204S-1000C,118

NXP Semiconductors

NOW WEEN - BTA204S-1000C - 3 QUA

640

ACTT8B-800CTN118

ACTT8B-800CTN118

NXP Semiconductors

AC THYRISTOR TRIAC - D2PAK

13600

MAC97A8/DG,412

MAC97A8/DG,412

NXP Semiconductors

NOW WEEN - MAC97A8 - 4 QUADRANT

24923

BTA2008-800D,412

BTA2008-800D,412

NXP Semiconductors

NOW WEEN - BTA2008-800D - 3 QUAD

4163

BTA425Y-800BT127

BTA425Y-800BT127

NXP Semiconductors

3 QUADRANT TRIAC TO 220AB

2375

BTA410-800CT,127

BTA410-800CT,127

NXP Semiconductors

NOW WEEN - BTA410-800CT - 3 QUAD

4000

BT136X-600F,127

BT136X-600F,127

NXP Semiconductors

NOW WEEN - BT136X-600F - 4 QUADR

0

BT137-600/L01127

BT137-600/L01127

NXP Semiconductors

4 QUADRANT TRIAC TO 220AB

12600

BTA212-600F,127

BTA212-600F,127

NXP Semiconductors

NOW WEEN - BTA212-600F - 3 QUADR

3000

BTA201-800E,412

BTA201-800E,412

NXP Semiconductors

NOW WEEN - BTA201-800E - 3 QUADR

2889

BT138B-600F,118

BT138B-600F,118

NXP Semiconductors

NOW WEEN - BT138B-600F - 4 QUADR

350

BTA316X-600E,127

BTA316X-600E,127

NXP Semiconductors

NOW WEEN - BTA316X-600E - 3 QUAD

0

BT138-800/DG,127

BT138-800/DG,127

NXP Semiconductors

NOW WEEN - BT138-800 - 4 QUADRAN

3000

BTA216X-800B/L02127

BTA216X-800B/L02127

NXP Semiconductors

3 QUADRANT TRIAC

3000

BTA410Y-600CT,127

BTA410Y-600CT,127

NXP Semiconductors

NOW WEEN - BTA410Y-600CT - 3 QUA

0

BT136S-800F,118

BT136S-800F,118

NXP Semiconductors

NOW WEEN - BT136S-800F - 4 QUADR

0

BTA202X-800D,127

BTA202X-800D,127

NXP Semiconductors

NOW WEEN - BTA202X-800D - 3 QUAD

14894

BT236X-600G,127

BT236X-600G,127

NXP Semiconductors

NOW WEEN - BT236X-600G - 4 QUADR

0

BT131-800D,112

BT131-800D,112

NXP Semiconductors

NOW WEEN - BT131-800D - 4 QUADRA

10060

ACT108-800E116

ACT108-800E116

NXP Semiconductors

AC THYRISTORS - TO 92

20000

Thyristors - TRIACs

1. Overview

TRIAC (Triode for Alternating Current) is a three-terminal semiconductor device belonging to the thyristor family. It enables bidirectional current flow control in AC circuits through a single gate terminal. As a key component in power electronics, TRIACs are widely used for phase control, switching, and regulation of AC loads. Their ability to conduct current in both directions makes them ideal for applications requiring full-wave control, such as dimmers and motor speed regulators.

2. Main Types and Functional Classification

Type Functional Characteristics Application Examples
Standard TRIAC General-purpose with moderate gate sensitivity Light dimmers, heater controls
Sensitive Gate TRIAC Low gate trigger current ( 5mA) Microcontroller-driven circuits
Logic Level TRIAC Compatible with 3.3V/5V logic signals Smart home automation systems
High dv/dt TRIAC Enhanced immunity to voltage spikes Industrial motor drives

3. Structure and Composition

TRIACs feature a four-layer (PNPN) silicon structure with three electrodes: Main Terminal 1 (MT1), Main Terminal 2 (MT2), and Gate (G). The symmetrical design allows bidirectional conduction. Modern TRIACs incorporate:

  • Dielectric passivation layers for voltage stability
  • Aluminum gate metallization
  • Epitaxial silicon wafers with precise doping profiles
  • Plastic encapsulation (TO-220/TO-92 packages)

4. Key Technical Parameters

Parameter Description Typical Range
Breakover Voltage (VBO) Minimum voltage to initiate conduction 200-1200V
Gate Trigger Current (IGT) Required gate current for turn-on 5-50mA
Holding Current (IH) Minimum current to maintain conduction 5-50mA
RMS On-State Current (IT(RMS)) Continuous load current capacity 0.5-50A
dv/dt Rating Voltage change immunity 10-50V/ s

5. Application Fields

  • Consumer Electronics: Smart lighting systems, washing machine water level controls
  • Industrial Automation: AC motor speed controllers, solid-state relays
  • Power Systems: Voltage regulators, reactive power compensators
  • Automotive: Electric vehicle charging circuits, HVAC controls
  • Renewable Energy: Solar inverter AC switching circuits

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Parameters
STMicroelectronics BT136-600E 600V, 4A, 10mA IGT
ON Semiconductor Q6015LH 600V, 15A, 15mA IGT
Infineon Technologies BTA16-600B 600V, 16A, 50mA IGT
Microsemi MAC97A8 600V, 8A, 5mA IGT

7. Selection Guidelines

  1. Verify VBO exceeds maximum circuit voltage by 20%
  2. IT(RMS) should be 1.5 load current
  3. Match IGT with driver circuit capability
  4. Consider heatsinking requirements
  5. Select dv/dt rating based on load inductance
  6. Use zero-crossing detection for EMI-sensitive applications

8. Industry Trends

Key development trends include:

  • Integration with SiC/GaN for higher efficiency
  • Smart packaging with built-in temperature sensors
  • Miniaturization for space-constrained applications
  • Improved immunity to electromagnetic interference
  • AI-driven predictive maintenance in industrial systems

Market growth is driven by smart grid implementations and EV charging infrastructure expansion, with a projected CAGR of 6.8% through 2030.

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