Thyristors - TRIACs

Image Part Number Description / PDF Quantity Rfq
BTA208X-1000C,127

BTA208X-1000C,127

NXP Semiconductors

NOW WEEN - BTA208X-1000C - 3 QUA

318

OT413127

OT413127

NXP Semiconductors

OT413 - TBC - TO 220AB

0

BTA204X-600C,127

BTA204X-600C,127

NXP Semiconductors

NOW WEEN - BTA204X-600C - 3 QUAD

37000

Z0107NA,116

Z0107NA,116

NXP Semiconductors

NOW WEEN - Z0107NA - 4 QUADRANT

99890

BTA410-600ET,127

BTA410-600ET,127

NXP Semiconductors

NOW WEEN - BTA410-600ET - 3 QUAD

4000

ACTT6B-800E,118

ACTT6B-800E,118

NXP Semiconductors

NOW WEEN - ACTT6B-800E - AC THYR

62400

BTA2008-600E,412

BTA2008-600E,412

NXP Semiconductors

NOW WEEN - BTA2008-600E - 3 QUAD

6000

BTA420X-800CT,127

BTA420X-800CT,127

NXP Semiconductors

NOW WEEN - BTA420X-800CT - 3 QUA

9286

BTA316X-800B/L01127

BTA316X-800B/L01127

NXP Semiconductors

3 QUADRANT TRIAC TO 220F

1200

BT134-800E,127

BT134-800E,127

NXP Semiconductors

NOW WEEN - BT134-800E - 4 QUADRA

0

BTA420Y-800BT127

BTA420Y-800BT127

NXP Semiconductors

3 QUADRANT TRIAC TO 220AB

4945

BTA204W-600E,135

BTA204W-600E,135

NXP Semiconductors

NOW WEEN - BTA204W-600E - 3 QUAD

89568

BTA330-800BTQ127

BTA330-800BTQ127

NXP Semiconductors

3 QUADRANT TRIAC

381

BTA316X-600E/DG12

BTA316X-600E/DG12

NXP Semiconductors

3 QUADRANT TRIAC

567

OT411127

OT411127

NXP Semiconductors

OT411 - TRIAC

2000

BTA208-800F,127

BTA208-800F,127

NXP Semiconductors

NOW WEEN - BTA208-800F - 3 QUADR

39000

BT137X-600F,127

BT137X-600F,127

NXP Semiconductors

NOW WEEN - BT137X-600F - 4 QUADR

0

BTA202X-800E,127

BTA202X-800E,127

NXP Semiconductors

NOW WEEN - BTA202X-800E - 3 QUAD

17968

BTA216-600B,127

BTA216-600B,127

NXP Semiconductors

NOW WEEN - BTA216-600B - 3 QUADR

0

ACTT6G-800E,127

ACTT6G-800E,127

NXP Semiconductors

NOW WEEN - ACTT6G-800E - AC THYR

590

Thyristors - TRIACs

1. Overview

TRIAC (Triode for Alternating Current) is a three-terminal semiconductor device belonging to the thyristor family. It enables bidirectional current flow control in AC circuits through a single gate terminal. As a key component in power electronics, TRIACs are widely used for phase control, switching, and regulation of AC loads. Their ability to conduct current in both directions makes them ideal for applications requiring full-wave control, such as dimmers and motor speed regulators.

2. Main Types and Functional Classification

Type Functional Characteristics Application Examples
Standard TRIAC General-purpose with moderate gate sensitivity Light dimmers, heater controls
Sensitive Gate TRIAC Low gate trigger current ( 5mA) Microcontroller-driven circuits
Logic Level TRIAC Compatible with 3.3V/5V logic signals Smart home automation systems
High dv/dt TRIAC Enhanced immunity to voltage spikes Industrial motor drives

3. Structure and Composition

TRIACs feature a four-layer (PNPN) silicon structure with three electrodes: Main Terminal 1 (MT1), Main Terminal 2 (MT2), and Gate (G). The symmetrical design allows bidirectional conduction. Modern TRIACs incorporate:

  • Dielectric passivation layers for voltage stability
  • Aluminum gate metallization
  • Epitaxial silicon wafers with precise doping profiles
  • Plastic encapsulation (TO-220/TO-92 packages)

4. Key Technical Parameters

Parameter Description Typical Range
Breakover Voltage (VBO) Minimum voltage to initiate conduction 200-1200V
Gate Trigger Current (IGT) Required gate current for turn-on 5-50mA
Holding Current (IH) Minimum current to maintain conduction 5-50mA
RMS On-State Current (IT(RMS)) Continuous load current capacity 0.5-50A
dv/dt Rating Voltage change immunity 10-50V/ s

5. Application Fields

  • Consumer Electronics: Smart lighting systems, washing machine water level controls
  • Industrial Automation: AC motor speed controllers, solid-state relays
  • Power Systems: Voltage regulators, reactive power compensators
  • Automotive: Electric vehicle charging circuits, HVAC controls
  • Renewable Energy: Solar inverter AC switching circuits

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Parameters
STMicroelectronics BT136-600E 600V, 4A, 10mA IGT
ON Semiconductor Q6015LH 600V, 15A, 15mA IGT
Infineon Technologies BTA16-600B 600V, 16A, 50mA IGT
Microsemi MAC97A8 600V, 8A, 5mA IGT

7. Selection Guidelines

  1. Verify VBO exceeds maximum circuit voltage by 20%
  2. IT(RMS) should be 1.5 load current
  3. Match IGT with driver circuit capability
  4. Consider heatsinking requirements
  5. Select dv/dt rating based on load inductance
  6. Use zero-crossing detection for EMI-sensitive applications

8. Industry Trends

Key development trends include:

  • Integration with SiC/GaN for higher efficiency
  • Smart packaging with built-in temperature sensors
  • Miniaturization for space-constrained applications
  • Improved immunity to electromagnetic interference
  • AI-driven predictive maintenance in industrial systems

Market growth is driven by smart grid implementations and EV charging infrastructure expansion, with a projected CAGR of 6.8% through 2030.

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