Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
MAZS2200ML

MAZS2200ML

Panasonic

DIODE ZENER 22V 150MW SSMINI2

0

MAZ8150GML

MAZ8150GML

Panasonic

DIODE ZENER 15V 150MW SMINI2

0

MAZ8100GML

MAZ8100GML

Panasonic

DIODE ZENER 10V 150MW SMINI2

0

MAZS160GML

MAZS160GML

Panasonic

DIODE ZENER 16V 150MW SSMINI2

0

MAZS0300LL

MAZS0300LL

Panasonic

DIODE ZENER 2.9V 150MW SSMINI2

0

MAZ82000ML

MAZ82000ML

Panasonic

DIODE ZENER 20V 150MW SMINI2

0

DZ2W03300L

DZ2W03300L

Panasonic

DIODE ZENER 3.3V 1W MINI2

0

DZ2W11000L

DZ2W11000L

Panasonic

DIODE ZENER 11V 1W MINI2

0

MAZ80910ML

MAZ80910ML

Panasonic

DIODE ZENER 9.1V 150MW SMINI2

0

DZ2S039M0L

DZ2S039M0L

Panasonic

DIODE ZENER 3.9V 150MW SSMINI2

0

MAZS033GHL

MAZS033GHL

Panasonic

DIODE ZENER 3.4V 150MW SSMINI2

0

DZ2W06800L

DZ2W06800L

Panasonic

DIODE ZENER 6.8V 1W MINI2

0

MAZ80680ML

MAZ80680ML

Panasonic

DIODE ZENER 6.8V 150MW SMINI2

0

MAZS1100ML

MAZS1100ML

Panasonic

DIODE ZENER 11V 150MW SSMINI2

0

MAZ81800ML

MAZ81800ML

Panasonic

DIODE ZENER 18V 150MW SMINI2

0

MAZS051GML

MAZS051GML

Panasonic

DIODE ZENER 5.1V 150MW SSMINI2

0

MAZ31600ML

MAZ31600ML

Panasonic

DIODE ZENER 16V 200MW MINI3

0

DZ2W10000L

DZ2W10000L

Panasonic

DIODE ZENER 10V 1W MINI2

0

MAZ8036GHL

MAZ8036GHL

Panasonic

DIODE ZENER 3.6V 150MW SMINI2

0

MAZ40430MF

MAZ40430MF

Panasonic

DIODE ZENER 4.3V 370MW DO34

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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