Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
MAZ210000G

MAZ210000G

Panasonic

DIODE ZENER 10V 1W DO41

4717

DZ2S02400L

DZ2S02400L

Panasonic

DIODE ZENER 2.4V 150MW SSMINI2

371

DZ2S180M0L

DZ2S180M0L

Panasonic

DIODE ZENER 18V 150MW SSMINI2

44

MAZS024G0L

MAZS024G0L

Panasonic

DIODE ZENER 2.4V 150MW SSMINI2

86

DZ2720000L

DZ2720000L

Panasonic

DIODE ZENER 20V 120MW SSSMINI2

9824

MAZ21300AG

MAZ21300AG

Panasonic

DIODE ZENER 13V 1W DO41

0

DZ2S033M0L

DZ2S033M0L

Panasonic

DIODE ZENER 3.3V 150MW SSMINI2

0

MAZS100GML

MAZS100GML

Panasonic

DIODE ZENER 10V 150MW SSMINI2

0

MAZ40560MF

MAZ40560MF

Panasonic

DIODE ZENER 5.6V 370MW DO34

0

DZ2J110M0L

DZ2J110M0L

Panasonic

DIODE ZENER 11V 200MW SMINI2

0

DZ2706800L

DZ2706800L

Panasonic

DIODE ZENER 6.8V 120MW SSSMINI2

0

MAZ8062GML

MAZ8062GML

Panasonic

DIODE ZENER 6.2V 150MW SMINI2

0

MAZ206800G

MAZ206800G

Panasonic

DIODE ZENER 6.8V 1W DO41

0

MAZ23000AG

MAZ23000AG

Panasonic

DIODE ZENER 30V 1W DO41

0

DZ2J075M0L

DZ2J075M0L

Panasonic

DIODE ZENER 7.5V 200MW SMINI2

0

DZ2413000L

DZ2413000L

Panasonic

DIODE ZENER 13V 2W TMINIP2

0

MAZS062GML

MAZS062GML

Panasonic

DIODE ZENER 6.2V 150MW SSMINI2

0

DZ2J270M0L

DZ2J270M0L

Panasonic

DIODE ZENER 27V 200MW SMINI2

0

MAZS240GML

MAZS240GML

Panasonic

DIODE ZENER 24V 150MW SSMINI2

0

DZ2405600L

DZ2405600L

Panasonic

DIODE ZENER 5.6V 2W TMINIP2

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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