Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
MAZ83600ML

MAZ83600ML

Panasonic

DIODE ZENER 36V 150MW SMINI2

0

DZ2J180M0L

DZ2J180M0L

Panasonic

DIODE ZENER 18V 200MW SMINI2

0

MAZ30330HL

MAZ30330HL

Panasonic

DIODE ZENER 3.3V 200MW MINI3

0

MAZ41100MF

MAZ41100MF

Panasonic

DIODE ZENER 11V 370MW DO34

0

MAZ80360HL

MAZ80360HL

Panasonic

DIODE ZENER 3.6V 150MW SMINI2

0

DZ2S330M0L

DZ2S330M0L

Panasonic

DIODE ZENER 33V 150MW SSMINI2

0

MAZ80510ML

MAZ80510ML

Panasonic

DIODE ZENER 5.1V 150MW SMINI2

0

DZ2S360M0L

DZ2S360M0L

Panasonic

DIODE ZENER 36V 150MW SSMINI2

0

MAZ8360GML

MAZ8360GML

Panasonic

DIODE ZENER 36V 150MW SMINI2

0

DZ2427000L

DZ2427000L

Panasonic

DIODE ZENER 27V 2W TMINIP2

0

MAZS0820ML

MAZS0820ML

Panasonic

DIODE ZENER 8.2V 150MW SSMINI2

0

MAZ20820AG

MAZ20820AG

Panasonic

DIODE ZENER 8.2V 1W DO41

0

MAZ8140GML

MAZ8140GML

Panasonic

DIODE ZENER 14V 150MW SMINI2

0

DZ2J06200L

DZ2J06200L

Panasonic

DIODE ZENER 6.2V 200MW SMINI2

0

DZ2J082M0L

DZ2J082M0L

Panasonic

DIODE ZENER 8.2V 200MW SMINI2

0

MAZS1200ML

MAZS1200ML

Panasonic

DIODE ZENER 12V 150MW SSMINI2

0

MAZ32200ML

MAZ32200ML

Panasonic

DIODE ZENER 22V 200MW MINI3

0

MAZD05600L

MAZD05600L

Panasonic

DIODE ZENER 5.6V 120MW SSSMINI2

0

DZ2W15000L

DZ2W15000L

Panasonic

DIODE ZENER 15V 1W MINI2

0

DZ2W03600L

DZ2W03600L

Panasonic

DIODE ZENER 3.6V 1W MINI2

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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