Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
MMSZ4709T

MMSZ4709T

Rectron USA

DIODE ZENER 24V 300MW SOD-523

0

BZV55C 5.6BSA

BZV55C 5.6BSA

Rectron USA

DIODE ZENER 5.6V 500MW LL-34

0

BZX85C43-T-M

BZX85C43-T-M

Rectron USA

DIODE ZENER 43V 1.3W DO-41

0

BZX884C3V3

BZX884C3V3

Rectron USA

DIODE ZENER 3.3V 250MW DN1006

0

1SMAF2EZ3.6

1SMAF2EZ3.6

Rectron USA

DIODE ZENER 3.6V 2W SMAF

0

1SMAF2EZ190

1SMAF2EZ190

Rectron USA

DIODE ZENER 190V 2W SMAF

0

MM5Z10B

MM5Z10B

Rectron USA

DIODE ZENER 10V 500MW SOD-523

0

MMBZ5257BW

MMBZ5257BW

Rectron USA

DIODE ZENER 33V 200MW SOT-323

0

BZM55C6.8BSC

BZM55C6.8BSC

Rectron USA

DIODE ZENER 6.8V 500MW LS-31

0

BZX84C5V6W

BZX84C5V6W

Rectron USA

DIODE ZENER 5.6V 200MW SOT-23

0

BZV55C 5.1BSB

BZV55C 5.1BSB

Rectron USA

DIODE ZENER 5.1V 500MW LL-34

0

BZT52C27S

BZT52C27S

Rectron USA

DIODE ZENER 27V 200MW SOD-323

0

BZD27C11P

BZD27C11P

Rectron USA

DIODE ZENER 11V 800MW SOD-123F

0

MMSZ5254BS

MMSZ5254BS

Rectron USA

DIODE ZENER 27V 500MW SOD-323

0

BZT52C22S

BZT52C22S

Rectron USA

DIODE ZENER 22V 200MW SOD-323

0

1SMA5952B

1SMA5952B

Rectron USA

DIODE ZENER 130V 1.5W SMA

0

1SMAF4729A

1SMAF4729A

Rectron USA

DIODE ZENER 3.6V 1W SMAF

0

DL4728A-T

DL4728A-T

Rectron USA

DIODE ZENER 3.3V 1W MELF

0

BZX984C56

BZX984C56

Rectron USA

DIODE ZENER 56V 150MW SOD-923

0

BZM55C5.6BS

BZM55C5.6BS

Rectron USA

DIODE ZENER 5.6V 500MW LS-31

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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