Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
BZM55B39

BZM55B39

Rectron USA

ZENER 39 500MW MICRO-MELF

0

SMA5916A

SMA5916A

Rectron USA

DIODE ZENER 4.3V 1W SMA

0

SMA3Z5.6A

SMA3Z5.6A

Rectron USA

DIODE ZENER 5.6V 3W SMA

0

Z135A

Z135A

Rectron USA

DIODE ZENER 135V 1W DO-41

0

Z105A

Z105A

Rectron USA

DIODE ZENER 105V 1W DO-41

0

BZT52B30S

BZT52B30S

Rectron USA

DIODE ZENER 30V 500MW SOD-323

0

M3Z4V3B

M3Z4V3B

Rectron USA

DIODE ZENER 4.3V 200MW SOD-323F

0

BZV55C 11BSA

BZV55C 11BSA

Rectron USA

DIODE ZENER 11V 500MW LL-34

0

1SMB5943B

1SMB5943B

Rectron USA

DIODE ZENER 56V 3W SMB

0

MM5Z6V2B

MM5Z6V2B

Rectron USA

DIODE ZENER 6.2V 500MW SOD-523

0

MMSZ4709

MMSZ4709

Rectron USA

DIODE ZENER 24V 500MW SOD-123

0

SMA3Z43A

SMA3Z43A

Rectron USA

DIODE ZENER 43V 3W SMA

0

BZX85C3V0-T-M

BZX85C3V0-T-M

Rectron USA

DIODE ZENER 3V 1.3W DO-41

0

BZV55C 18BSB

BZV55C 18BSB

Rectron USA

DIODE ZENER 18V 500MW LL-34

0

BZX584C43

BZX584C43

Rectron USA

DIODE ZENER 43V 200MW SOD-523

0

BZT52B36

BZT52B36

Rectron USA

DIODE ZENER 36V 500MW SOD-123

0

BZD27C180P

BZD27C180P

Rectron USA

DIODE ZENER 180V 800MW SOD-123F

0

MMBZ5240BW

MMBZ5240BW

Rectron USA

DIODE ZENER 10V 200MW SOT-323

0

BZX884C3V9

BZX884C3V9

Rectron USA

DIODE ZENER 3.9V 250MW DN1006

0

Z100

Z100

Rectron USA

DIODE ZENER 100V 1W DO-41

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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