Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
FM4757W

FM4757W

Rectron USA

DIODE ZENER GLASS 51V 1W SMA

0

SMB5375B

SMB5375B

Rectron USA

DIODE ZENER 82V 5W SMB

0

BZX85C120-T-M

BZX85C120-T-M

Rectron USA

DIODE ZENER 120V 1.3W DO-41

0

BZM55B16

BZM55B16

Rectron USA

ZENER 16V 500MW MICRO-MELF

0

MMSZ4707

MMSZ4707

Rectron USA

DIODE ZENER 20V 500MW SOD-123

0

BZX85C4V7-T-M

BZX85C4V7-T-M

Rectron USA

DIODE ZENER 4.7V 1.3W DO-41

0

Z300B

Z300B

Rectron USA

DIODE ZENER 300V 1W DO-41

0

MMSZ5227BS

MMSZ5227BS

Rectron USA

DIODE ZENER 3.6V 500MW SOD-323

0

BZV55C 20BSC

BZV55C 20BSC

Rectron USA

DIODE ZENER 20V 500MW LL-34

0

BZV55C 15BSC

BZV55C 15BSC

Rectron USA

DIODE ZENER 15V 500MW LL-34

0

Z135B

Z135B

Rectron USA

DIODE ZENER 135V 1W DO-41

0

MMSZ4688T

MMSZ4688T

Rectron USA

DIODE ZENER 4.7V 300MW SOD-523

0

SMA5936A

SMA5936A

Rectron USA

DIODE ZENER 30V 1W SMA

0

BZX984C5V1

BZX984C5V1

Rectron USA

DIODE ZENER 5.1V 150MW SOD-923

0

SMA3Z100A

SMA3Z100A

Rectron USA

DIODE ZENER 100V 3W SMA

0

1SMA5930B

1SMA5930B

Rectron USA

DIODE ZENER 16V 1.5W SMA

0

DL4749A

DL4749A

Rectron USA

DIODE ZENER 24V 1W LL-41

0

BZX84C6V8W

BZX84C6V8W

Rectron USA

DIODE ZENER 6.8V 200MW SOT-323

0

SMB5335B

SMB5335B

Rectron USA

DIODE ZENER 3.9V 5W SMB

0

BZD27C6V2P

BZD27C6V2P

Rectron USA

DIODE ZENER 6.2V 800MW SOD-123F

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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