Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
HS243100R

HS243100R

Microsemi

DIODE SCHOTTKY 100V 240A HALFPAK

0

SK36AE3/TR13

SK36AE3/TR13

Microsemi

DIODE SCHOTTKY 60V 3A SMB

0

HS24515E3

HS24515E3

Microsemi

DIODE SCHOTTKY 15V 240A HALFPAK

0

5818SMG/TR13

5818SMG/TR13

Microsemi

DIODE SCHOTTKY 30V 1A DO215AA

0

SK39/TR13

SK39/TR13

Microsemi

DIODE SCHOTTKY 3A 90V SMCJ

0

APT10SCE65K

APT10SCE65K

Microsemi

DIODE SCHOTTKY 650V 10A TO220

0

64101

64101

Microsemi

TRANSISTOR

0

JANTX1N6629U

JANTX1N6629U

Microsemi

DIODE GEN PURP 800V 1.4A E-MELF

0

JAN1N6627U

JAN1N6627U

Microsemi

DIODE GEN PURP 400V 1.75A E-MELF

0

UFR8515

UFR8515

Microsemi

RECTIFIER

0

APT20SCE170B

APT20SCE170B

Microsemi

DIODE SCHOTTKY 1700V 20A TO247

0

JANTXV1N6626U

JANTXV1N6626U

Microsemi

DIODE GEN PURP 200V 1.75A E-MELF

0

JAN1N6629U

JAN1N6629U

Microsemi

DIODE GEN PURP 800V 1.4A E-MELF

0

5817SMG/TR13

5817SMG/TR13

Microsemi

DIODE SCHOTTKY 20V 1A DO215AA

0

SDM30004R

SDM30004R

Microsemi

DIODE GEN PURP 400V 300A DIE

0

APT20SCE65B

APT20SCE65B

Microsemi

DIODE SCHOTTKY 650V 20A TO247

0

1N6910UTK2AS

1N6910UTK2AS

Microsemi

DIODE SCHOTTKY 15V 25A 2-THINKEY

0

JAN1N6630U

JAN1N6630U

Microsemi

DIODE GEN PURP 900V 1.4A E-MELF

0

UFR8510R

UFR8510R

Microsemi

RECTIFIER

0

1N4534UR

1N4534UR

Microsemi

DIODE SWITCHING

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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