Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
JANTXV1N6623U

JANTXV1N6623U

Microsemi

DIODE GEN PURP 800V 1A A-MELF

0

APT10SCD120B

APT10SCD120B

Microsemi

DIODE SCHOTTKY 1.2KV 36A TO247

0

SK33AE3/TR13

SK33AE3/TR13

Microsemi

DIODE SCHOTTKY 30V 3A SMB

0

MS108E3/TR8

MS108E3/TR8

Microsemi

DIODE SCHOTTKY 80V 1A DO204AL

0

APT20SCD120S

APT20SCD120S

Microsemi

DIODE SCHOTTKY 1.2KV 68A D3PAK

0

1N4531UR

1N4531UR

Microsemi

DIODE GEN PURP 75V 125MA DO213AA

0

SK15E3/TR13

SK15E3/TR13

Microsemi

DIODE SCHOTTKY 50V 1A DO214AA

0

HU10260

HU10260

Microsemi

DIODE GEN PURP 600V 100A HALFPAK

0

MS106/TR12

MS106/TR12

Microsemi

DIODE SCHOTTKY 60V 1A DO204AL

0

MSG105

MSG105

Microsemi

DIODE SCHOTTKY 50V 1A DO204AL

0

JANTX1N6623U

JANTX1N6623U

Microsemi

DIODE GEN PURP 800V 1A A-MELF

0

SK33B/TR13

SK33B/TR13

Microsemi

DIODE SCHOTTKY 30V 3A SMB

0

SK34BE3/TR13

SK34BE3/TR13

Microsemi

DIODE SCHOTTKY 40V 3A SMB

0

SK33BE3/TR13

SK33BE3/TR13

Microsemi

DIODE SCHOTTKY 30V 3A SMB

0

MS104E3/TR12

MS104E3/TR12

Microsemi

DIODE SCHOTTKY 40V 1A DO204AL

0

MS108E3/TR12

MS108E3/TR12

Microsemi

DIODE SCHOTTKY 80V 1A DO204AL

0

MS110E3/TR8

MS110E3/TR8

Microsemi

DIODE SCHOTTKY 100V 1A DO204AL

0

1N6629US

1N6629US

Microsemi

DIODE GEN PURP 880V 1.4A A-MELF

0

SK32B/TR13

SK32B/TR13

Microsemi

DIODE SCHOTTKY 20V 3A SMB

0

SK17E3/TR13

SK17E3/TR13

Microsemi

DIODE SCHOTTKY 70V 1A DO214AA

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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