Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
UFR8520R

UFR8520R

Microsemi

RECTIFIER

0

SK35E3/TR13

SK35E3/TR13

Microsemi

DIODE SCHOTTKY 3A 50V SMCJ

0

JANTX1N6630U

JANTX1N6630U

Microsemi

DIODE GEN PURP 900V 1.4A E-MELF

0

5819SMG/TR13

5819SMG/TR13

Microsemi

DIODE SCHOTTKY 40V 1A DO215AA

0

JANTXV1N6629

JANTXV1N6629

Microsemi

DIODE GEN PURP 880V 1.4A AXIAL

0

SK310E3/TR13

SK310E3/TR13

Microsemi

DIODE SCHOTTKY 3A 100V SMCJ

0

HS18140R

HS18140R

Microsemi

DIODE SCHOTTKY 40V 180A HALFPAK

0

68190

68190

Microsemi

TRANSISTOR

0

HS183100R

HS183100R

Microsemi

DIODE SCHOTTKY 100V 180A HALFPAK

0

HS18135

HS18135

Microsemi

DIODE SCHOTTKY 35V 180A HALFPAK

0

APT20SCE120B

APT20SCE120B

Microsemi

DIODE SCHOTTKY 1200V 20A TO247

0

HS247200R

HS247200R

Microsemi

DIODE SCHOTTKY 200V 240A HALFPAK

0

SK110E3/TR13

SK110E3/TR13

Microsemi

DIODE SCHOTTKY 100V 1A DO214BA

0

68191

68191

Microsemi

TRANSISTOR

0

JAN1N6626U

JAN1N6626U

Microsemi

DIODE GEN PURP 200V 1.75A E-MELF

0

UFR8510

UFR8510

Microsemi

RECTIFIER

0

HU10260R

HU10260R

Microsemi

DIODE GEN PURP 600V 100A HALFPAK

0

UMA5819

UMA5819

Microsemi

DIODE SCHOTTKY 40V 1A ULTRAMITE

0

UPS5100H/TR13

UPS5100H/TR13

Microsemi

DIODE SCHOTTKY 5A 100V POWERMITE

0

SK310AE3/TR13

SK310AE3/TR13

Microsemi

DIODE SCHOTTKY 3A 100V SMAJ

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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