Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
UMAF5819

UMAF5819

Microsemi

DIODE SCHOTTKY 40V 1A ULTRAMITE

0

HS12045R

HS12045R

Microsemi

DIODE SCHOTTKY 45V 120A HALFPAK

0

UFR8520

UFR8520

Microsemi

RECTIFIER

0

UMA5818

UMA5818

Microsemi

DIODE SCHOTTKY 30V 1A ULTRAMITE

0

APT50SCE120B

APT50SCE120B

Microsemi

DIODE SCHOTTKY 1200V 50A TO247

0

64075

64075

Microsemi

TRANSISTOR

0

LSM115J

LSM115J

Microsemi

DIODE SCHOTTKY 15V 1A DO214BA

0

JAN1N6628U

JAN1N6628U

Microsemi

DIODE GEN PURP 600V 1.75A E-MELF

0

MSC090SMA120S

MSC090SMA120S

Microsemi

MOSFET N-CH 1200V D3PAK

0

UTR4340

UTR4340

Microsemi

DIODE GEN PURP 400V 4A AXIAL

0

HS24045R

HS24045R

Microsemi

DIODE SCHOTTKY 45V 240A HALFPAK

0

SK32AE3/TR13

SK32AE3/TR13

Microsemi

DIODE SCHOTTKY 3A 20V SMAJ

0

SK310/TR13

SK310/TR13

Microsemi

DIODE SCHOTTKY 3A 100V SMCJ

0

5818SMGE3/TR13

5818SMGE3/TR13

Microsemi

DIODE SCHOTTKY 30V 1A DO215AA

0

HS18230R

HS18230R

Microsemi

DIODE SCHOTTKY 30V 180A HALFPAK

0

UFR8515R

UFR8515R

Microsemi

RECTIFIER

0

HS247180R

HS247180R

Microsemi

DIODE SCHOTTKY 180V 240A HALFPAK

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
RFQ BOM Call Skype Email
Top