Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
FR104T/R

FR104T/R

EIC Semiconductor, Inc.

DIODE GEN PURP 400V 1A DO41

30000

1N5399T/R

1N5399T/R

EIC Semiconductor, Inc.

STD 1.5A, CASE TYPE: DO-41

10000

HER103BULK

HER103BULK

EIC Semiconductor, Inc.

DIODE GEN PURP 200V 1A DO41

1000

FR106T/R

FR106T/R

EIC Semiconductor, Inc.

DIODE GEN PURP 800V 1A DO41

35000

FR207BULK

FR207BULK

EIC Semiconductor, Inc.

DIODE GEN PURP 1000V 2A DO15

5000

1N5394BULK

1N5394BULK

EIC Semiconductor, Inc.

ZENER 5W, CASE TYPE: DO-15

20000

BY133T/R

BY133T/R

EIC Semiconductor, Inc.

DIODE GEN PURP 1300V 1A DO41

140000

FR106BULK

FR106BULK

EIC Semiconductor, Inc.

DIODE GEN PURP 800V 1A DO41

37000

1N4006T/R

1N4006T/R

EIC Semiconductor, Inc.

STD 1A, CASE TYPE: DO-41

40000

HER104BULK

HER104BULK

EIC Semiconductor, Inc.

DIODE GEN PURP 300V 1A DO41

10000

FR105BULK

FR105BULK

EIC Semiconductor, Inc.

DIODE GEN PURP 600V 1A DO41

10000

1N4935BULK

1N4935BULK

EIC Semiconductor, Inc.

FR 1A, CASE TYPE: DO-41

51000

MBRA210L

MBRA210L

EIC Semiconductor, Inc.

DIODE SCHOTTKY 10V 2A SMA

35000

BYD33GBULK

BYD33GBULK

EIC Semiconductor, Inc.

DIODE AVALANCHE 400V 1.3A DO41

5000

1N5393T/R

1N5393T/R

EIC Semiconductor, Inc.

STD 1.5A, CASE TYPE: DO-41

15000

1N4005T/R

1N4005T/R

EIC Semiconductor, Inc.

STD 1A, CASE TYPE: DO-41

75000

BYD33MBULK

BYD33MBULK

EIC Semiconductor, Inc.

DIODE AVALANCHE 1000V 1.3A DO41

5000

1N4007BULK

1N4007BULK

EIC Semiconductor, Inc.

STD 1A, CASE TYPE: DO-41

0

BYD13JBULK

BYD13JBULK

EIC Semiconductor, Inc.

DIODE AVALANCHE 600V 1.4A DO41

5000

1N4148T/R

1N4148T/R

EIC Semiconductor, Inc.

SW 150MA, CASE TYPE: DO-35

319000

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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