Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
FR103T/R

FR103T/R

EIC Semiconductor, Inc.

DIODE GEN PURP 200V 1A DO41

35000

FR101T/R

FR101T/R

EIC Semiconductor, Inc.

DIODE GEN PURP 50V 1A DO41

35000

BA159BULK

BA159BULK

EIC Semiconductor, Inc.

DIODE GEN PURP 1000V 1A DO41

17000

1N5391BULK

1N5391BULK

EIC Semiconductor, Inc.

ZENER 5W, CASE TYPE: DO-15

20000

1N5819ST/R

1N5819ST/R

EIC Semiconductor, Inc.

DIODE SCHOTTKY 40V 1A DO41

25000

HER105BULK

HER105BULK

EIC Semiconductor, Inc.

DIODE GEN PURP 400V 1A DO41

9000

1N4934BULK

1N4934BULK

EIC Semiconductor, Inc.

FR 1A, CASE TYPE: DO-41

90000

1N4004BULK

1N4004BULK

EIC Semiconductor, Inc.

STD 1A, CASE TYPE: DO-41

38000

MR754T/R

MR754T/R

EIC Semiconductor, Inc.

DIODE GEN PURP 400V 6A D6

3200

BYD13GBULK

BYD13GBULK

EIC Semiconductor, Inc.

DIODE AVALANCHE 400V 1.4A DO41

5000

FR155T/R

FR155T/R

EIC Semiconductor, Inc.

DIODE GEN PURP 600V 1.5A DO41

10000

FR102BULK

FR102BULK

EIC Semiconductor, Inc.

DIODE GEN PURP 100V 1A DO41

38000

1N5392T/R

1N5392T/R

EIC Semiconductor, Inc.

STD 1.5A, CASE TYPE: DO-41

60000

BYD13DBULK

BYD13DBULK

EIC Semiconductor, Inc.

DIODE AVALANCHE 200V 1.4A DO41

5000

SR1J

SR1J

EIC Semiconductor, Inc.

FRC 1 A, CASE TYPE SMA

5000

BY584BULK

BY584BULK

EIC Semiconductor, Inc.

DIODE GEN PURP 1500V 85MA DO41

4000

1N4004T/R

1N4004T/R

EIC Semiconductor, Inc.

STD 1A, CASE TYPE: DO-41

80000

AR3504

AR3504

EIC Semiconductor, Inc.

DIODE GEN PURP 200V 25A MICRODE

2000

1N5397T/R

1N5397T/R

EIC Semiconductor, Inc.

STD 1.5A, CASE TYPE: DO-41

55000

1N4933T/R

1N4933T/R

EIC Semiconductor, Inc.

FR 1A, CASE TYPE: DO-41

70000

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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