Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
DR204T/R

DR204T/R

EIC Semiconductor, Inc.

DIODE GEN PURP 400V 2A DO15

15000

GN2MT/R

GN2MT/R

EIC Semiconductor, Inc.

DIODE GEN PURP 1000V 2A SMA

3000

BYD13KBULK

BYD13KBULK

EIC Semiconductor, Inc.

DIODE AVALANCHE 800V 1.4A DO41

2000

HER101BULK

HER101BULK

EIC Semiconductor, Inc.

DIODE GEN PURP 50V 1A DO41

7000

BYD13MBULK

BYD13MBULK

EIC Semiconductor, Inc.

DIODE AVALANCHE 1000V 1.4A DO41

5000

FEPF16DT

FEPF16DT

EIC Semiconductor, Inc.

DIODE GEN PURP 200V 16A ITO220AB

530

FR103BULK

FR103BULK

EIC Semiconductor, Inc.

DIODE GEN PURP 200V 1A DO41

38000

1N5397BULK

1N5397BULK

EIC Semiconductor, Inc.

ZENER 5W, CASE TYPE: DO-15

20000

1N914T/R

1N914T/R

EIC Semiconductor, Inc.

DIODE GEN PURP 75V 75MA DO35

10000

SN13

SN13

EIC Semiconductor, Inc.

REC 1 A, CASE TYPE SMA

50000

BYV26E

BYV26E

EIC Semiconductor, Inc.

DIODE AVALANCHE 1000V 1A DO41

1000

BA158BULK

BA158BULK

EIC Semiconductor, Inc.

DIODE GEN PURP 600V 1A DO41

13000

BYG20J

BYG20J

EIC Semiconductor, Inc.

SF 1.5A, CASE TYPE: SMA-L

5000

SN1K

SN1K

EIC Semiconductor, Inc.

REC 1 A, CASE TYPE SMA

45000

DR206T/R

DR206T/R

EIC Semiconductor, Inc.

DIODE GEN PURP 600V 2A DO15

9000

10A07H

10A07H

EIC Semiconductor, Inc.

DIODE SI 1KV 10A 2-PIN CASE D-6

800

1N4933BULK

1N4933BULK

EIC Semiconductor, Inc.

FR 1A, CASE TYPE: DO-41

98000

1N5395T/R

1N5395T/R

EIC Semiconductor, Inc.

STD 1.5A, CASE TYPE: DO-41

40000

1N5392BULK

1N5392BULK

EIC Semiconductor, Inc.

ZENER 5W, CASE TYPE: DO-15

20000

HER107BULK

HER107BULK

EIC Semiconductor, Inc.

DIODE GEN PURP 800V 1A DO41

15000

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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