Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
BAT54WFILMY

BAT54WFILMY

STMicroelectronics

DIODE SCHOTTKY 40V 300MA SOT323

2458

STPS1150A

STPS1150A

STMicroelectronics

DIODE SCHOTTKY 150V 1A SMA

10457

STPSC20H12GY-TR

STPSC20H12GY-TR

STMicroelectronics

DIODE SCHOTTKY 1.2KV 20A D2PAK

1322

STPS1L40A

STPS1L40A

STMicroelectronics

DIODE SCHOTTKY 40V 1A SMA

4950

BAT41

BAT41

STMicroelectronics

DIODE SCHOTTKY 100V 100MA DO35

33900

STPSC10H12WL

STPSC10H12WL

STMicroelectronics

DIODE SCHOTTKY 1.2KV 10A DO247

535

STTH102

STTH102

STMicroelectronics

DIODE GEN PURP 200V 1A DO41

0

BAT20JFILM

BAT20JFILM

STMicroelectronics

DIODE SCHOTTKY 23V 1A SOD323

0

STPSC12065G2Y-TR

STPSC12065G2Y-TR

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE

300

STTH4L06

STTH4L06

STMicroelectronics

DIODE GEN PURP 600V 4A DO201AD

0

STTH5L06D

STTH5L06D

STMicroelectronics

DIODE GEN PURP 600V 5A TO220AC

717

STTH208UFY

STTH208UFY

STMicroelectronics

DIODE GEN PURP 800V 2A SMBFLAT

0

STPS340S

STPS340S

STMicroelectronics

DIODE SCHOTTKY 40V 3A SMC

6420

BAT43

BAT43

STMicroelectronics

DIODE SCHOTTKY 30V 200MA DO35

10897

STPSC10H12B2-TR

STPSC10H12B2-TR

STMicroelectronics

1200V, 10A, SILICON CARBIDE POWE

162

STPS2L40AFN

STPS2L40AFN

STMicroelectronics

40 V, 2 A LOW DROP POWER SCHOTTK

9562

FERD30SM100DJFTR

FERD30SM100DJFTR

STMicroelectronics

DIODE RECT 100V 30A POWERFLAT

3052

STPS1L20M

STPS1L20M

STMicroelectronics

DIODE SCHOTTKY 20V 1A STMITE

7635

STPS5H100B-TR

STPS5H100B-TR

STMicroelectronics

DIODE SCHOTTKY 100V 5A DPAK

294

STPS1H100MF

STPS1H100MF

STMicroelectronics

DIODE SCHOTTKY 100V 1A STMITEFLA

193

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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