Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
STPSC4H065B-TR

STPSC4H065B-TR

STMicroelectronics

DIODE SCHOTTKY 650V 4A DPAK

1291

STTH1R02U

STTH1R02U

STMicroelectronics

DIODE GEN PURP 200V 1.5A SMB

0

STPSC4H065DLF

STPSC4H065DLF

STMicroelectronics

SILICON CARBIDE DIODES

132

STTH5L06RL

STTH5L06RL

STMicroelectronics

DIODE GEN PURP 600V 5A DO201AD

0

STPS10H60SFY

STPS10H60SFY

STMicroelectronics

AUTOMOTIVE 60V LOW IR POWER SCHO

0

STTH302

STTH302

STMicroelectronics

DIODE GEN PURP 200V 3A DO201AD

1088

TMBAT49FILM

TMBAT49FILM

STMicroelectronics

DIODE SCHOTTKY 80V 500MA MELF

8401

STTH8R03D

STTH8R03D

STMicroelectronics

DIODE GEN PURP 300V 8A TO220AC

0

1N5822RL

1N5822RL

STMicroelectronics

DIODE SCHOTTKY 40V 3A DO201AD

183

STPS1L30AFN

STPS1L30AFN

STMicroelectronics

30 V, 1 A LOW DROP POWER SCHOTTK

19845

STPS340SY

STPS340SY

STMicroelectronics

DIODE SCHOTTKY 40V 3A SMC

0

STPSC10H12B-TR1

STPSC10H12B-TR1

STMicroelectronics

DIODE SCHOTTKY 1.2KV 10A DPAK

1032

STPSC10H065DLF

STPSC10H065DLF

STMicroelectronics

DIODES AND RECTIFIERS

320

STPS4S200B-TR

STPS4S200B-TR

STMicroelectronics

DIODE SCHOTTKY 200V 4A DPAK

733

STTH30RQ06D

STTH30RQ06D

STMicroelectronics

DIODE GEN PURP 600V 30A TO220AC

994

STTH60RQ06W

STTH60RQ06W

STMicroelectronics

TURBO 2 ULTRAFAST HIGH VOLTAGE R

365

STTH31AC06SPF

STTH31AC06SPF

STMicroelectronics

DIODE GEN PURP 600V 30A TO-3PF

0

STTH3010W

STTH3010W

STMicroelectronics

DIODE GEN PURP 1KV 30A DO247

254

BAS70JFILM

BAS70JFILM

STMicroelectronics

DIODE SCHOTTKY 70V 70MA SOD323

5444

STPSC10H065G-TR

STPSC10H065G-TR

STMicroelectronics

DIODE SILICON 650V 10A D2PAK

659

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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