Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
1N5817

1N5817

STMicroelectronics

DIODE SCHOTTKY 20V 1A DO41

12546

STTH2002DI

STTH2002DI

STMicroelectronics

DIODE GEN PURP 200V 20A TO220AC

844

STPSC5H12B-TR1

STPSC5H12B-TR1

STMicroelectronics

DIODE SCHOTTKY 1.2KV 5A DPAK

180

STTH3006DPI

STTH3006DPI

STMicroelectronics

DIODE GEN PURP 600V 30A DOP3I

1

STPS745G-TR

STPS745G-TR

STMicroelectronics

DIODE SCHOTTKY 45V 7.5A D2PAK

143

STTH8R06DIRG

STTH8R06DIRG

STMicroelectronics

DIODE GEN PURP 600V 8A TO220AC

619

FERD20S100STS

FERD20S100STS

STMicroelectronics

DIODE RECT 100V 20A TO220AB

2287

STPS20120D

STPS20120D

STMicroelectronics

DIODE SCHOTTKY 120V 20A TO220AB

3873

STPS8H100G

STPS8H100G

STMicroelectronics

DIODE SCHOTTKY 100V 8A D2PAK

0

FERD30SM100ST

FERD30SM100ST

STMicroelectronics

DIODE RECT 100V 30A TO220AB

0

STTH3010D

STTH3010D

STMicroelectronics

DIODE GEN PURP 1KV 30A TO220AC

4507

STPSC4H065DI

STPSC4H065DI

STMicroelectronics

DIODE SCHOTTKY 650V 4A TO220AC

972

STTH3L06UFY

STTH3L06UFY

STMicroelectronics

DIODE GEN PURP 600V 3A SMBFLAT

0

STPS1045B-TR

STPS1045B-TR

STMicroelectronics

DIODE SCHOTTKY 45V 10A DPAK

395

STPS20M100ST

STPS20M100ST

STMicroelectronics

DIODE SCHOTTKY 100V 20A TO220AB

1980

STPS30M120SR

STPS30M120SR

STMicroelectronics

DIODE SCHOTTKY 120V 30A I2PAK

1

STPS340AFN

STPS340AFN

STMicroelectronics

40 V, 3 A SMD POWER SCHOTTKY REC

0

STPS1L30M

STPS1L30M

STMicroelectronics

DIODE SCHOTTKY 30V 1A STMITE

10583

STTH802G

STTH802G

STMicroelectronics

DIODE GEN PURP 200V 8A D2PAK

4

STPS3L45AF

STPS3L45AF

STMicroelectronics

DIODE SCHOTTKY 45V 3A SMAFLAT

35615

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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