Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
10A2

10A2

Rectron USA

DIODE GEN PURP 1000V 10A R-6

0

FM206

FM206

Rectron USA

DIODE GEN GLASS 2A 800V SMB

0

FM201A

FM201A

Rectron USA

DIODE GP GLASS 2A 50V SMA

0

1A7G

1A7G

Rectron USA

DIODE GP GLASS 1000V 1A R-1

0

FM4001F

FM4001F

Rectron USA

DIODE GP GLASS 2A 50V SMAF

0

10A8

10A8

Rectron USA

DIODE GEN PURP 1000V 10A R-6

0

RL1605C

RL1605C

Rectron USA

DIODE GP GLASS 16A 600V TO-220

0

FM4006F

FM4006F

Rectron USA

DIODE GP GLASS 2A 800V SMAF

0

RL153

RL153

Rectron USA

DIODE GEN PURP 1000V 1.5A DO-15

0

FM303B

FM303B

Rectron USA

DIODE GP GLASS 3A 200V SMB

0

FM207

FM207

Rectron USA

DIODE GEN GLASS 2A 1000V SMB

0

FM307

FM307

Rectron USA

DIODE GP GLASS 3A 1000V SMC

0

FM4005

FM4005

Rectron USA

DIODE GP GLASS 2A 600V SMA

0

RL1N4005G

RL1N4005G

Rectron USA

DIODE GLASS 1A 600V A-405

0

RL1607C

RL1607C

Rectron USA

DIODE GP GLASS 16A 1000V TO-220

0

FM202

FM202

Rectron USA

DIODE GEN GLASS 2A 100V SMB

0

05A2

05A2

Rectron USA

DIODE 1A 100V SOD-123F

0

1N4005W

1N4005W

Rectron USA

DIODE GEN 1A 600V SOD-123F

0

05A5L

05A5L

Rectron USA

DIODE .5A 600V SOD-123F

0

FM4003W

FM4003W

Rectron USA

DIODE 1A 200V SMX

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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