Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
RL203

RL203

Rectron USA

DIODE GEN PURP 1000V 2A DO-15

0

RL252

RL252

Rectron USA

DIODE GEN PURP 1000V 2.5A R-3

0

FM202A

FM202A

Rectron USA

DIODE GP GLASS 2A 100V SMA

0

FM4007

FM4007

Rectron USA

DIODE GP GLASS 2A 1000V SMA

0

FM204A

FM204A

Rectron USA

DIODE GP GLASS 2A 400V SMA

0

FM4007W

FM4007W

Rectron USA

DIODE 1A 1000V SMX

0

FM4006WS

FM4006WS

Rectron USA

DIODE GLASS 1A 800V SOD-323

0

FM505B

FM505B

Rectron USA

DIODE GEN GLASS 2A 600V SMB

0

FM4001

FM4001

Rectron USA

DIODE GP GLASS 2A 50V SMA

0

RL1N4002G

RL1N4002G

Rectron USA

DIODE GLASS 1A 100V A-405

0

RL154

RL154

Rectron USA

DIODE GEN PURP 1000V 1.5A DO-15

0

M4G

M4G

Rectron USA

DIODE GLASS 1A 400V SMX

0

RL207

RL207

Rectron USA

DIODE GEN PURP 1000V 2A DO-15

0

FM504B

FM504B

Rectron USA

DIODE GEN GLASS 2A 400V SMB

0

05A1L

05A1L

Rectron USA

DIODE .5A 50V SOD-123F

0

FM306B

FM306B

Rectron USA

DIODE GP GLASS 3A 800V SMB

0

FM804P

FM804P

Rectron USA

DIODE GP GLASS 8A 400V DO277

0

RL255

RL255

Rectron USA

DIODE GEN PURP 1000V 2.5A R-3

0

RL1604C

RL1604C

Rectron USA

DIODE GP GLASS 16A 400V TO-220

0

FM805P

FM805P

Rectron USA

DIODE GP GLASS 8A 600V DO277

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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