Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
1N4006W

1N4006W

Rectron USA

DIODE GEN 1A 800V SOD-123F

0

FM806C

FM806C

Rectron USA

DIODE GP GLASS 8A 800V SMC

0

FM4005F

FM4005F

Rectron USA

DIODE GP GLASS 2A 600V SMAF

0

SA1L

SA1L

Rectron USA

DIODE 1A 50V SOD-123F

0

RL207G

RL207G

Rectron USA

DIODE GP GLASS 1000V 2A DO-15

0

RL157

RL157

Rectron USA

DIODE GEN PURP 1000V 1.5A DO-15

0

RL151

RL151

Rectron USA

DIODE GEN PURP 1000V 1.5A DO-15

0

FM4006W

FM4006W

Rectron USA

DIODE 1A 800V SMX

0

FM204

FM204

Rectron USA

DIODE GEN GLASS 2A 400V SMB

0

RL156

RL156

Rectron USA

DIODE GEN PURP 1000V 1.5A DO-15

0

05A6L

05A6L

Rectron USA

DIODE .5A 800V SOD-123F

0

05A3L

05A3L

Rectron USA

DIODE .5A 200V SOD-123F

0

1N4003W

1N4003W

Rectron USA

DIODE GEN 1A 200V SOD-123F

0

FM803P

FM803P

Rectron USA

DIODE GP GLASS 8A 200V DO277

0

SA5L

SA5L

Rectron USA

DIODE 1A 600V SOD-123F

0

RL201

RL201

Rectron USA

DIODE GEN PURP 1000V 2A DO-15

0

FM502

FM502

Rectron USA

DIODE GP GLASS 5A 100V SMC

0

1A4G

1A4G

Rectron USA

DIODE GP GLASS 400V 1A R-1

0

SA3L

SA3L

Rectron USA

DIODE 1A 200V SOD-123F

0

FM203A

FM203A

Rectron USA

DIODE GP GLASS 2A 200V SMA

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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