Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
FM4001WS

FM4001WS

Rectron USA

DIODE GLASS 1A 50V SOD-323

0

FM4003

FM4003

Rectron USA

DIODE GP GLASS 2A 200V SMA

0

RL1N4005

RL1N4005

Rectron USA

DIODE GEN PURP 1000V 1A A-405

0

M7G

M7G

Rectron USA

DIODE GLASS 1A 1000V SMX

0

RL206

RL206

Rectron USA

DIODE GEN PURP 1000V 2A DO-15

0

M5G

M5G

Rectron USA

DIODE GLASS 1A 600V SMX

0

05A1

05A1

Rectron USA

DIODE 1A 50V SOD-123F

0

RL251

RL251

Rectron USA

DIODE GEN PURP 1000V 2.5A R-3

0

SA6

SA6

Rectron USA

DIODE 1A 800V SOD-123F

0

SA7L

SA7L

Rectron USA

DIODE 1A 1000V SOD-123F

0

FM4002F

FM4002F

Rectron USA

DIODE GP GLASS 2A 100V SMAF

0

05A3

05A3

Rectron USA

DIODE 1A 200V SOD-123F

0

10A4

10A4

Rectron USA

DIODE GEN PURP 1000V 10A R-6

0

M1G

M1G

Rectron USA

DIODE GLASS 1A 50V SMX

0

FM303

FM303

Rectron USA

DIODE GP GLASS 3A 200V SMC

0

SA6L

SA6L

Rectron USA

DIODE 1A 800V SOD-123F

0

RL1N4004

RL1N4004

Rectron USA

DIODE GEN PURP 1000V 1A A-405

0

6A10G

6A10G

Rectron USA

DIODE GEN PURP 1000V 6A R-6

0

FM301B

FM301B

Rectron USA

DIODE GP GLASS 3A 50V SMB

0

1A5G

1A5G

Rectron USA

DIODE GP GLASS 600V 1A R-1

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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