Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
R5020818FSWA

R5020818FSWA

Powerex, Inc.

DIODE GEN PURP 800V 175A DO205AA

0

1N3264

1N3264

Powerex, Inc.

DIODE GEN PURP 250V 160A DO205AB

0

R6201840XXOO

R6201840XXOO

Powerex, Inc.

DIODE GP 1.8KV 400A DO200AA R62

0

R5011415XXWA

R5011415XXWA

Powerex, Inc.

DIODE GEN PURP 1.4KV 150A DO205

0

R6201640XXOO

R6201640XXOO

Powerex, Inc.

DIODE GP 1.6KV 400A DO200AA R62

0

R5031013LSWA

R5031013LSWA

Powerex, Inc.

DIODE GEN PURP 1KV 125A DO205

0

1N3172R

1N3172R

Powerex, Inc.

DIODE STUD MNT 240A 800V DO-9

0

R7011804XXUA

R7011804XXUA

Powerex, Inc.

DIODE GEN PURP 1.8KV 450A DO200

0

A451LB

A451LB

Powerex, Inc.

DIODE GP 2.2KV 2500A DO200AC

0

R9G04412XX

R9G04412XX

Powerex, Inc.

DIODE GP 4.4KV 1200A DO200AB

0

R7S01012XX

R7S01012XX

Powerex, Inc.

DIODE GP 1KV 1200A DO200AA R62

0

R7201009XXOO

R7201009XXOO

Powerex, Inc.

DIODE GEN PURP 1KV 900A DO200AB

0

A170N

A170N

Powerex, Inc.

DIODE GEN PURP 800V 100A DO205AA

0

R5030818FSWA

R5030818FSWA

Powerex, Inc.

DIODE GEN PURP 800V 175A DO205AA

0

R7000203XXUA

R7000203XXUA

Powerex, Inc.

DIODE GEN PURP 200V 300A DO200AA

0

R6202630XXOO

R6202630XXOO

Powerex, Inc.

DIODE GP 2.6KV 300A DO200AA R62

0

R6202030XXOO

R6202030XXOO

Powerex, Inc.

DIODE GP 2KV 300A DO200AA R62

0

A398D

A398D

Powerex, Inc.

DIODE GEN PURP 400V 400A DO200AA

0

R6021035ESYA

R6021035ESYA

Powerex, Inc.

DIODE GEN PURP 1KV 350A DO205

0

R6020825HSYA

R6020825HSYA

Powerex, Inc.

DIODE GEN PURP 800V 250A DO205AB

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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