Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
1N3741

1N3741

Powerex, Inc.

RECTIFIER STUD MOUNT DO-9

0

A180RPB

A180RPB

Powerex, Inc.

DIODE GEN PURP 1.2KV 150A DO205

0

R7201409XXOO

R7201409XXOO

Powerex, Inc.

DIODE GP 1.4KV 900A DO200AB

0

1N3271

1N3271

Powerex, Inc.

DIODE GEN PURP 800V 160A DO205AB

0

R9G01012XX

R9G01012XX

Powerex, Inc.

DIODE GEN PURP 1KV 1200A DO200AB

0

R6030835ESYA

R6030835ESYA

Powerex, Inc.

DIODE GEN PURP 800V 350A DO205AB

0

R6201240XXOO

R6201240XXOO

Powerex, Inc.

DIODE GP 1.2KV 400A DO200AA R62

0

1N3161

1N3161

Powerex, Inc.

DIODE STUD MNT 240A 50V DO-9

0

R7S00612XX

R7S00612XX

Powerex, Inc.

DIODE GP 600V 1200A DO200AA R62

0

R7222205ASOO

R7222205ASOO

Powerex, Inc.

DIODE GP 2.2KV 500A DO200AB

0

R6030422PSYA

R6030422PSYA

Powerex, Inc.

DIODE GEN PURP 400V 220A DO205AB

0

R6011830XXYA

R6011830XXYA

Powerex, Inc.

DIODE GEN PURP 1.8KV 300A DO205

0

1N4049

1N4049

Powerex, Inc.

DIODE GEN PURP 300V 275A DO205AB

0

1N4589R

1N4589R

Powerex, Inc.

DIODE GEN PURP 300V 150A DO205AA

0

PS410825

PS410825

Powerex, Inc.

DIODE GP 800V 2500A POWRBLOK

0

R7010203XXUA

R7010203XXUA

Powerex, Inc.

DIODE GEN PURP 200V 300A DO200AA

0

A180RP

A180RP

Powerex, Inc.

DIODE GEN PURP 1KV 150A DO205

0

R7002403XXUA

R7002403XXUA

Powerex, Inc.

DIODE GEN PURP 2.4KV 300A DO200

0

A437P

A437P

Powerex, Inc.

DIODE GEN PURP 1KV 600A DO200

0

A177PB

A177PB

Powerex, Inc.

DIODE GEN PURP 1.2KV 100A DO205

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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