Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
1N3292A

1N3292A

Powerex, Inc.

DIODE GEN PURP 500V 100A DO205AA

0

R6001225XXYA

R6001225XXYA

Powerex, Inc.

DIODE GEN PURP 1.2KV 250A DO205

0

R9G00218XX

R9G00218XX

Powerex, Inc.

DIODE GP 200V 1800A DO200AB

0

R7013003XXUA

R7013003XXUA

Powerex, Inc.

DIODE GEN PURP 3KV 300A DO200

0

R7S00808XX

R7S00808XX

Powerex, Inc.

DIODE GP 800V 800A DO200AA R62

0

RBT84043XXOO

RBT84043XXOO

Powerex, Inc.

RECTIFIER DISC RBT

0

A451L

A451L

Powerex, Inc.

DIODE GEN PURP 2KV 2500A DO200AC

0

R9G02612XX

R9G02612XX

Powerex, Inc.

DIODE GP 2.6KV 1200A DO200AB

0

R7200609XXOO

R7200609XXOO

Powerex, Inc.

DIODE GEN PURP 600V 900A DO200AB

0

R7201012XXOO

R7201012XXOO

Powerex, Inc.

DIODE GEN PURP 1KV 1200A DO200AB

0

A397P

A397P

Powerex, Inc.

DIODE GEN PURP 1KV 400A DO200

0

A170RD

A170RD

Powerex, Inc.

DIODE GEN PURP 400V 100A DO205AA

0

1N4053R

1N4053R

Powerex, Inc.

DIODE GEN PURP 700V 275A DO205AB

0

1N4047R

1N4047R

Powerex, Inc.

DIODE GEN PURP 200V 275A DO205AB

0

1N3260

1N3260

Powerex, Inc.

DIODE GEN PURP 50V 160A DO205AB

0

1N3738R

1N3738R

Powerex, Inc.

RECTIFIER STUD MOUNT DO-9

0

R7220808ESOO

R7220808ESOO

Powerex, Inc.

DIODE GEN PURP 800V 800A DO200AB

0

A430N

A430N

Powerex, Inc.

DIODE GP 800V 1000A DO200AB

0

A451PN

A451PN

Powerex, Inc.

DIODE GP 1.8KV 2500A DO200AC

0

R6220240HSOO

R6220240HSOO

Powerex, Inc.

DIODE GP 200V 400A DO200AA R62

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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