Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
A330PE

A330PE

Powerex, Inc.

DIODE GEN PURP 1.5KV 1200A DO200

0

R7001604XXUA

R7001604XXUA

Powerex, Inc.

DIODE GEN PURP 1.6KV 450A DO200

17

R7201609XXOO

R7201609XXOO

Powerex, Inc.

DIODE GP 1.6KV 900A DO200AB

0

R6001425XXYA

R6001425XXYA

Powerex, Inc.

DIODE GEN PURP 1.4KV 250A DO205

0

R5001610XXWA

R5001610XXWA

Powerex, Inc.

DIODE GEN PURP 1.6KV 100A DO205

0

R6021225HSYA

R6021225HSYA

Powerex, Inc.

DIODE GEN PURP 1.2KV 250A DO205

0

R5011410XXWA

R5011410XXWA

Powerex, Inc.

DIODE GEN PURP 1.4KV 100A DO205

0

R7221407CSOO

R7221407CSOO

Powerex, Inc.

DIODE GP 1.4KV 700A DO200AB

0

R6031022PSYA

R6031022PSYA

Powerex, Inc.

DIODE GEN PURP 1KV 220A DO205

0

1N3163

1N3163

Powerex, Inc.

DIODE STUD MNT 240A 150V DO-9

0

R6031425HSYA

R6031425HSYA

Powerex, Inc.

DIODE GEN PURP 1.4KV 250A DO205

0

R7220807CSOO

R7220807CSOO

Powerex, Inc.

DIODE GEN PURP 800V 700A DO200AB

0

A187RD

A187RD

Powerex, Inc.

DIODE GEN PURP 400V 150A DO205AA

0

R6200240XXOO

R6200240XXOO

Powerex, Inc.

DIODE GP 200V 400A DO200AA R62

0

R7200212XXOO

R7200212XXOO

Powerex, Inc.

DIODE GP 200V 1200A DO200AB

0

1N4056R

1N4056R

Powerex, Inc.

DIODE GEN PURP 1KV 275A DO205

0

A180M

A180M

Powerex, Inc.

DIODE GEN PURP 600V 150A DO205AA

0

R6021425HSYA

R6021425HSYA

Powerex, Inc.

DIODE GEN PURP 1.4KV 250A DO205

0

R7010603XXUA

R7010603XXUA

Powerex, Inc.

DIODE GEN PURP 600V 300A DO200AA

0

A170PD

A170PD

Powerex, Inc.

DIODE GEN PURP 1.4KV 100A DO205

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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