Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
RBS80670XX

RBS80670XX

Powerex, Inc.

DIODE GEN PURP 600V 7000A

0

1N4050R

1N4050R

Powerex, Inc.

DIODE GEN PURP 400V 275A DO205AB

0

1N3169R

1N3169R

Powerex, Inc.

DIODE STUD MNT 240A 500V DO-9

0

1N3163R

1N3163R

Powerex, Inc.

DIODE STUD MNT 240A 150V DO-9

0

R5030413LSWA

R5030413LSWA

Powerex, Inc.

DIODE GEN PURP 400V 125A DO205AA

0

R6001030XXYA

R6001030XXYA

Powerex, Inc.

RECTIFIER STUD MOUNT FORWARD DO-

0

1N3275

1N3275

Powerex, Inc.

DIODE GEN PURP 1.4KV 160A DO205

0

1N3263R

1N3263R

Powerex, Inc.

DIODE GEN PURP 200V 160A DO205AB

0

1N4051R

1N4051R

Powerex, Inc.

DIODE GEN PURP 500V 275A DO205AB

0

A437PD

A437PD

Powerex, Inc.

DIODE GEN PURP 1.4KV 600A DO200

0

R5031210RSWA

R5031210RSWA

Powerex, Inc.

DIODE GEN PURP 1.2KV 100A DO205

0

R5020210RSWA

R5020210RSWA

Powerex, Inc.

DIODE GEN PURP 200V 100A DO205AA

0

R5030210RSWA

R5030210RSWA

Powerex, Inc.

DIODE GEN PURP 200V 100A DO205AA

0

R7002603XXUA

R7002603XXUA

Powerex, Inc.

DIODE GEN PURP 2.6KV 300A DO200

0

R9G00822XX

R9G00822XX

Powerex, Inc.

DIODE GP 800V 2200A DO200AB

0

A180PD

A180PD

Powerex, Inc.

DIODE GEN PURP 1.4KV 150A DO205

0

R7003803XXUA

R7003803XXUA

Powerex, Inc.

DIODE GEN PURP 3.8KV 300A DO200

0

A187P

A187P

Powerex, Inc.

DIODE GEN PURP 1KV 150A DO205

0

1N3266

1N3266

Powerex, Inc.

DIODE GEN PURP 350V 160A DO205AB

0

A397PB

A397PB

Powerex, Inc.

DIODE GEN PURP 1.2KV 400A DO200

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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