Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
R6020635ESYA

R6020635ESYA

Powerex, Inc.

DIODE GEN PURP 600V 350A DO205AB

0

A190PE

A190PE

Powerex, Inc.

DIODE GEN PURP 1.5KV 250A DO205

0

R7S02208XX

R7S02208XX

Powerex, Inc.

DIODE GP 2.2KV 800A DO200AA R62

0

R5031010RSWA

R5031010RSWA

Powerex, Inc.

DIODE GEN PURP 1KV 100A DO205

0

R5020613LSWA

R5020613LSWA

Powerex, Inc.

DIODE GEN PURP 600V 125A DO205AA

0

R5030410RSWA

R5030410RSWA

Powerex, Inc.

DIODE GEN PURP 400V 100A DO205AA

0

A187M

A187M

Powerex, Inc.

DIODE GEN PURP 600V 150A DO205AA

0

R7013403XXUA

R7013403XXUA

Powerex, Inc.

DIODE GEN PURP 4.4KV 300A DO200

0

R6010430XXYA

R6010430XXYA

Powerex, Inc.

RECTIFIER STUD MOUNT REVERSE DO-

0

A437PB

A437PB

Powerex, Inc.

DIODE GEN PURP 1.2KV 600A DO200

0

RA201436XX

RA201436XX

Powerex, Inc.

DIODE GP 1.4KV 3600A POWRDISC

0

R6030435ESYA

R6030435ESYA

Powerex, Inc.

DIODE GEN PURP 400V 350A DO205AB

0

R6011225XXYA

R6011225XXYA

Powerex, Inc.

DIODE GEN PURP 1.2KV 250A DO205

0

R7222407CSOO

R7222407CSOO

Powerex, Inc.

DIODE GP 2.4KV 700A DO200AB

0

A180RPE

A180RPE

Powerex, Inc.

DIODE GEN PURP 1.5KV 150A DO205

0

R7001205XXUA

R7001205XXUA

Powerex, Inc.

DIODE GEN PURP 1.2KV 550A DO200

0

RBS84035XX

RBS84035XX

Powerex, Inc.

DIODE GEN PURP 4.2KV 3500A

0

R5001415XXWA

R5001415XXWA

Powerex, Inc.

DIODE GEN PURP 1.4KV 150A DO205

0

1N3170R

1N3170R

Powerex, Inc.

DIODE STUD MNT 240A 600V DO-9

0

A390PE

A390PE

Powerex, Inc.

DIODE GP 1.5KV 400A DO200AA R62

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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