Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
RBK86525XX

RBK86525XX

Powerex, Inc.

DIODE GEN PURP 6.5KV 3200A

0

RA202820XX

RA202820XX

Powerex, Inc.

DIODE GP 2.8KV 2000A POWRDISC

0

R6031222PSYA

R6031222PSYA

Powerex, Inc.

DIODE GEN PURP 1.2KV 220A DO205

0

1N3162

1N3162

Powerex, Inc.

DIODE STUD MNT 240A 100V DO-9

0

R6220430PSOO

R6220430PSOO

Powerex, Inc.

DIODE GP 400V 300A DO200AA R62

0

R7001803XXUA

R7001803XXUA

Powerex, Inc.

DIODE GEN PURP 1.8KV 300A DO200

0

R7000805XXUA

R7000805XXUA

Powerex, Inc.

DIODE GEN PURP 800V 550A DO200AA

0

R6011625XXYA

R6011625XXYA

Powerex, Inc.

DIODE GEN PURP 1.6KV 250A DO205

0

R7014203XXUA

R7014203XXUA

Powerex, Inc.

DIODE GEN PURP 4.2KV 300A DO200

0

R9G00622XX

R9G00622XX

Powerex, Inc.

DIODE GP 600V 2200A DO200AB

0

1N3261R

1N3261R

Powerex, Inc.

DIODE GEN PURP 100V 160A DO205AB

0

A170PB

A170PB

Powerex, Inc.

DIODE GEN PURP 1.2KV 100A DO205

0

R6001230XXYA

R6001230XXYA

Powerex, Inc.

DIODE GEN PURP 1.2KV 300A DO205

0

1N3740R

1N3740R

Powerex, Inc.

RECTIFIER STUD MOUNT DO-9

0

A190RP

A190RP

Powerex, Inc.

DIODE GEN PURP REV 1KV DO205AB

0

1N3166R

1N3166R

Powerex, Inc.

DIODE STUD MNT 240A 300V DO-9

0

R7011604XXUA

R7011604XXUA

Powerex, Inc.

DIODE GEN PURP 1.6KV 450A DO200

0

A190P

A190P

Powerex, Inc.

DIODE GEN PURP 1KV 250A DO205

0

PS411825

PS411825

Powerex, Inc.

DIODE GP 1.8KV 2500A POWRBLOK

0

1N3265R

1N3265R

Powerex, Inc.

DIODE GEN PURP 300V 160A DO205AB

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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