Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
R9G00212XX

R9G00212XX

Powerex, Inc.

DIODE GP 200V 1200A DO200AB

0

A398N

A398N

Powerex, Inc.

DIODE GEN PURP 800V 400A DO200AA

0

R6221055ESOO

R6221055ESOO

Powerex, Inc.

DIODE GP 1KV 550A DO200AA R62

0

A170RPE

A170RPE

Powerex, Inc.

DIODE GEN PURP 1.5KV 100A DO205

0

R6031225HSYA

R6031225HSYA

Powerex, Inc.

DIODE GEN PURP 1.2KV 250A DO205

0

R5031413LSWA

R5031413LSWA

Powerex, Inc.

DIODE GEN PURP 1.4KV 125A DO205

0

R6220830PSOO

R6220830PSOO

Powerex, Inc.

DIODE GP 800V 300A DO200AA R62

0

R6202240XXOO

R6202240XXOO

Powerex, Inc.

DIODE GP 2.2KV 400A DO200AA R62

0

R7221006HSOO

R7221006HSOO

Powerex, Inc.

DIODE GEN PURP 1KV 650A DO200AB

0

RA203025XX

RA203025XX

Powerex, Inc.

DIODE GP 3KV 2500A POWRDISC

0

RA203425XX

RA203425XX

Powerex, Inc.

DIODE GP 3.4KV 2500A POWRDISC

0

R7002004XXUA

R7002004XXUA

Powerex, Inc.

DIODE GEN PURP 2KV 450A DO200

0

PS411225

PS411225

Powerex, Inc.

DIODE GP 1.2KV 2500A POWRBLOK

0

R5030418FSWA

R5030418FSWA

Powerex, Inc.

DIODE GEN PURP 400V 175A DO205AA

0

R9G01022XX

R9G01022XX

Powerex, Inc.

DIODE GEN PURP 1KV 2200A DO200AB

0

R7200412XXOO

R7200412XXOO

Powerex, Inc.

DIODE GP 400V 1200A DO200AB

0

R6002225XXYA

R6002225XXYA

Powerex, Inc.

DIODE GEN PURP 2.2KV 250A DO205

0

R7000603XXUA

R7000603XXUA

Powerex, Inc.

DIODE GEN PURP 600V 300A DO200AA

0

R6000825XXYA

R6000825XXYA

Powerex, Inc.

RECTIFIER STUD MOUNT FORWARD DO-

0

R6031235ESYA

R6031235ESYA

Powerex, Inc.

DIODE GEN PURP 1.2KV 350A DO205

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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