Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MA6X12400L

MA6X12400L

Panasonic

DIODE ARRAY GP 80V 100MA MINI6

0

MA3X71600L

MA3X71600L

Panasonic

DIODE ARRAY SCHOTTKY 30V MINI3

0

DA6X103T0R

DA6X103T0R

Panasonic

DIODE ARRAY GP 80V 100MA MINI6

0

MA3D650

MA3D650

Panasonic

DIODE ARRAY GP 200V 10A TO220D

0

MA4X71300L

MA4X71300L

Panasonic

DIODE ARRAY SCHOTTKY 30V MINI4

0

DB4X501K0R

DB4X501K0R

Panasonic

DIODE ARRAY SCHOTTKY 50V MINI4

0

MA3X19800L

MA3X19800L

Panasonic

DIODE ARRAY GP 40V 100MA MINI3

0

MAS3795E0L

MAS3795E0L

Panasonic

DIODE ARRAY SCHOTTKY 30V SSSMINI

0

DB37315E0L

DB37315E0L

Panasonic

DIODE SCHOTTKY 30V 20MA SOT723

0

DB5S309K0R

DB5S309K0R

Panasonic

DIODE SCHOTKY 30V 100MA SOT665

0

DA3J101J0L

DA3J101J0L

Panasonic

DIODE ARRAY GP 80V 150MA SMINI3

0

DA3X101J0L

DA3X101J0L

Panasonic

DIODE ARRAY GP 80V 150MA SC59-3

0

MA6X1250GL

MA6X1250GL

Panasonic

DIODE ARRAY GP 40V 100MA

0

DB3J406N0L

DB3J406N0L

Panasonic

DIODE SCHOTTKY 40V 75MA SMINI3

0

DA3S101J0L

DA3S101J0L

Panasonic

DIODE ARRAY GP 80V 150MA SC89

0

DB4X314F0R

DB4X314F0R

Panasonic

DIODE ARRAY SCHOTTKY 30V MINI4

0

MA3J1430GL

MA3J1430GL

Panasonic

DIODE ARRAY GP 40V 100MA SMINI3

0

DB3J315E0L

DB3J315E0L

Panasonic

DIODE ARRAY SCHOTTKY 30V SMINI3

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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