Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MA3S132D0L

MA3S132D0L

Panasonic

DIODE ARRAY GP 80V 100MA SSMINI3

0

MA4X17400L

MA4X17400L

Panasonic

DIODE ARRAY GP 200V 100MA MINI4

0

MA3J14700L

MA3J14700L

Panasonic

DIODE ARRAY GP 80V 100MA SMINI3

0

MA3SD29F0L

MA3SD29F0L

Panasonic

DIODE ARRAY SCHOTTKY 30V SSMINI3

0

MA3J741D0L

MA3J741D0L

Panasonic

DIODE ARRAY SCHOTTKY 30V SMINI3

0

MA3J142E0L

MA3J142E0L

Panasonic

DIODE ARRAY GP 80V 100MA SMINI3

0

MA3X786D0L

MA3X786D0L

Panasonic

DIODE ARRAY SCHOTTKY 30V MINI3

0

MA6X12200L

MA6X12200L

Panasonic

DIODE ARRAY GP 80V 100MA MINI6

0

MA3S132DGL

MA3S132DGL

Panasonic

DIODE ARRAY GP 80V 100MA SSMINI3

0

MA6X12900L

MA6X12900L

Panasonic

DIODE ARRAY GP 200V 200MA MINI6

0

MA3J142D0L

MA3J142D0L

Panasonic

DIODE ARRAY GP 80V 100MA SMINI3

0

MA3S795D0L

MA3S795D0L

Panasonic

DIODE ARRAY SCHOTTKY 30V SSMINI3

0

MA3X721E0L

MA3X721E0L

Panasonic

DIODE ARRAY SCHOTTKY 30V MINI3

0

MA4S11100L

MA4S11100L

Panasonic

DIODE ARRAY SCHOTTKY 80V SSMINI4

0

MA3X157A0L

MA3X157A0L

Panasonic

DIODE ARRAY GP 80V 100MA MINI3

0

DB3S406F0L

DB3S406F0L

Panasonic

DIODE ARRAY SCHOTTKY 40V SSMINI3

0

DB3X316J0L

DB3X316J0L

Panasonic

DIODE ARRAY SCHOTTKY 30V MINI3

0

MAS3132DGL

MAS3132DGL

Panasonic

DIODE ARRAY GP 80V 100MA SSMINI3

0

MA3J741DGL

MA3J741DGL

Panasonic

DIODE ARRAY SCHOTTKY 30V SMINI3

0

DA3S101F0L

DA3S101F0L

Panasonic

DIODE ARRAY GP 80V 100MA SSMINI3

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top